Optimized phosphorus diffusion process and performance improvement of c-Si solar cell by eliminating SiP precipitates in the emitter

被引：5

作者：

Dong, Peng ^{[1
,2
,3
,4
]}

Jiang, Tingting ^{[3
,4
]}

Yang, Deren ^{[3
,4
]}

Yu, Xuegong ^{[3
,4
]}

机构：

[1] China Acad Engn Phys, Microsyst & Terahertz Res Ctr, Mianyang 621999, Sichuan, Peoples R China

[2] China Acad Engn Phys, Inst Elect Engn, Mianyang 621999, Sichuan, Peoples R China

[3] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China

[4] Zhejiang Univ, Dept Mat Sci & Engn, Hangzhou 310027, Zhejiang, Peoples R China

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2019年 / 30卷 / 14期

基金：

中国国家自然科学基金;

关键词：

ELECTRICALLY INACTIVE PHOSPHORUS; AUGER RECOMBINATION; SILICON; COEFFICIENTS; JUNCTION; SURFACE;

D O I：

10.1007/s10854-019-01765-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Phosphorus diffusion is the most common way to form the emitter for p-type crystalline silicon (c-Si) based solar cells. The emitter region is usually known as dead layer, which may result in the band gap narrowing and higher carrier recombination. In this work we have demonstrated that the SiP precipitates are usually formed in the emitter of c-Si during phosphorus diffusion process, which can become the recombination centers for the minority carriers and therefore degrade the performance of c-Si solar cells. By a post-anneal treatment or a higher temperature diffusion with lower concentration of phosphorus source, the SiP precipitates in the emitter region can be effectively eliminated. As a result, the corresponding solar cell based on the modified phosphorus diffusion process exhibits a higher conversion efficiency than the conventional one by a value of 0.2%.

引用

页码：13820 / 13825

页数：6

共 25 条

[1] Assessment and parameterisation of Coulomb-enhanced Auger recombination coefficients in lowly injected crystalline silicon [J].