Low Specific Ohmic Contacts to n-type Germanium Using a Low Temperature NiGe Process

被引：5

作者：

Gallacher, K. ^{[1
]}

Velha, P. ^{[1
]}

Paul, D. J. ^{[1
]}

MacLaren, I. ^{[2
]}

Myronov, M. ^{[3
]}

Leadley, D. R. ^{[3
]}

机构：

[1] Univ Glasgow, Sch Engn, Rankine Bldg,Oakfield Ave, Glasgow G12 8LT, Lanark, Scotland

[2] Univ Glasgow, Univ Ave, Sch Phys & Astron, Glasgow G12 8QQ, Lanark, Scotland

[3] Univ Warwick, Dept Phys, Coventry CV4 7AL, W Midlands, England

来源：

SIGE, GE, AND RELATED COMPOUNDS 5: MATERIALS, PROCESSING, AND DEVICES | 2012年 / 50卷 / 09期

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1149/05009.1081ecst

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

A new n-Ge Ohmic contact scheme is demonstrated using a three stage deposition of Ni, Ge and Ni. The lowest specific contact resistivity demonstrated was (1.68 +/- 0.4) x 10(-7) Omega-cm(2), with a low transfer length of (0.95 +/- 0.12) for deposited Ni and Ge annealed at 340 degrees C for 30 s on n-Ge with a doping density of 3 x 10(19) cm(-3).

引用

页码：1081 / 1084

页数：4

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