In-situ growth monitoring by spectroscopy ellipsometry of MOCVD cubic-GaN(001)

被引：4

作者：

Ramil, AM ^{[1
]}

Schmidegg, K

Bonanni, A

Sitter, H

Stifter, D

Li, SF

As, DJ

Lischka, K

机构：

[1] Johannes Kepler Univ Linz, Inst Semicond Phys & Solid State Phys, Linz, Austria

[2] Upper Austrian Res GmbH, Linz, Austria

[3] Univ Gesamthsch Paderborn, Fac Sci, Paderborn, Germany

来源：

THIN SOLID FILMS | 2004年 / 455卷

关键词：

ellipsometry; metalorganic chemical vapor deposition; cubic GaN; on-line monitoring;

D O I：

10.1016/j.tsf.2004.01.036

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In-situ and on-line spectroscopic ellipsometry has been carried out during the metal-organic chemical vapor deposition of cubic GaN on GaN/GaAs(001) templates fabricated via molecular beam epitaxy. The optical response at growth temperature and the different growth stages have been monitored and the real and imaginary part of the pseudo-dielectric function has been computed by means of the two-phase (ambient-bulk substrate) model. Kinetic ellipsometry measurements acquired, respectively, under and above the energy gap of the deposited material are discussed. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：684 / 687

页数：4

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