Tuning Interlayer Coupling in Large-Area Heterostructures with CVD-Grown MoS2 and WS2 Monolayers

被引:739
作者
Tongay, Sefaattin [1 ]
Fan, Wen [1 ,2 ]
Kang, Jun [3 ]
Park, Joonsuk [4 ]
Koldemir, Unsal [4 ]
Suh, Joonki [1 ]
Narang, Deepa S. [5 ]
Liu, Kai [1 ]
Ji, Jie [2 ]
Li, Jingbo [3 ]
Sinclair, Robert [4 ]
Wu, Junqiao [1 ,3 ,6 ]
机构
[1] Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA
[2] Univ Sci & Technol China, Dept Thermal Sci & Energy Engn, Hefei 230027, Anhui, Peoples R China
[3] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China
[4] Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA
[5] Alliance Univ, ACED, Dept Phys, Bangalore 562106, Karnataka, India
[6] Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Div Mat Sci, Berkeley, CA 94720 USA
基金
美国国家科学基金会; 中国博士后科学基金;
关键词
Monolayer; heterostructure; MoS2/WS2; interlayer coupling; 2D materials; 2-DIMENSIONAL SEMICONDUCTORS; ELECTRICAL CONTROL; PHOTOLUMINESCENCE; EMISSION; LAYERS;
D O I
10.1021/nl500515q
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Band offsets between different monolayer transition metal dichalcogenides are expected to efficiently separate charge carriers or rectify charge flow, offering a mechanism for designing atomically thin devices and probing exotic two-dimensional physics. However, developing such large-area heterostructures has been hampered by challenges in synthesis of monolayers and effectively coupling neighboring layers. Here, we demonstrate large-area (>tens of micrometers) heterostructures of CVD-grown WS2, and MoS2 monolayers, where the interlayer interaction is externally tuned from noncoupling to strong coupling. Following this trend, the luminescence spectrum of the heterostructures evolves from an additive line profile where each layer contributes independently to a new profile that is dictated by charge transfer and band normalization between the WS2 and MoS2 layers. These results and findings open up venues to creating new material systems with rich functionalities and novel physical effects.
引用
收藏
页码:3185 / 3190
页数:6
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