Low temperature sintering of Li2(Mg0.3Zn0.7)Ti3O8-0.12TiO2 microwave dielectric ceramics with controllable grain size

The effects of BaO-B2O3-SiO2 (BBS) frit on sinterability, microstructure and microwave dielectric properties of Li-2(Mg0.3Zn0.7)Ti3O8-0.12TiO(2) (LMZT) ceramics were systematically investigated. BBS frit can effectively lower the sintering temperature of LMZT ceramics to below 900 A degrees C. Suitable BBS frit addition can accelerate the growth of the LMZT grains while inhibit the abnormal grain growth at the same time. The LMZT ceramics with 2 wt% BBS frit sintered at 900 A degrees C for 3 h show homogeneous microstructure composed of 5-10 mu m grains and excellent dielectric properties: epsilon (r) = 24.1, Q x f = 21,980 GHz, tau (f) = -4.1 ppm/ A degrees C. It is compatible with Ag electrodes, which makes it a potential candidate material for low temperature co-fired ceramics technology application.