Conducting Nb-doped TiO2 thin films fabricated with an atomic layer deposition technique

被引：31
|
作者：
Niemela, Janne-Petteri [1 ]
Yamauchi, Hisao [1 ]
Karppinen, Maarit [1 ]
机构：
[1] Aalto Univ, Dept Chem, Inorgan Chem Lab, FI-00076 Aalto, Finland
来源：
THIN SOLID FILMS | 2014年 / 551卷
基金：
芬兰科学院;
关键词：
Conducting oxide; Nb-doped TiO2; Atomic layer deposition; Transport properties; TITANIUM-DIOXIDE; OPTICAL-PROPERTIES; OXIDE; GROWTH; GLASS;
D O I：
10.1016/j.tsf.2013.11.043
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Highly conducting Ti1-xNbxO2 thin films have been grown on glass substrates from TiCl4, Nb(OEt)(5) and H2O with an atomic layer deposition (ALD) technique. The films become electrically conducting and crystallize with the anatase structure upon a reductive post-deposition annealing. A highly c-axis oriented Ti0.75Nb0.25O2 film exhibits room-temperature resistivity as low as 1.4 x 10(-3) Omega cm. The charge carrier density and electron mobility, as estimated from Seebeck and resistivity measurements, are 0.21-1.1 x 10(21) cm(-3) and 4.2-22 cm(2)/Vs, respectively. The electrical properties of the ALD-fabricated Nb-doped anatase films are comparable with those of sputter-deposited polycrystalline films on glass. (C) 2013 Elsevier B.V. All rights reserved.
引用
收藏
页码：19 / 22
页数：4
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