High thermoelectric figures of merit in PbTe quantum wells

被引：183

作者：

Harman, TC

Spears, DL

Manfra, MJ

机构：

[1] Lincoln Laboratory, Massachusetts Inst. of Technology, Lexington

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1996年 / 25卷 / 07期

关键词：

molecular beam epitaxy (MBE); multiple quantum wells (MQWs); PbTe; Pb1-xEuxTe/PbTe; thermoelectric figure of merit;

D O I：

10.1007/BF02659913

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High-quality Pb1-xEuxTe/PbTe multiple quantum wells (MQWs) have been grown by molecular beam epitaxy. The measured 300K thermoelectric properties have been compared with that of the best bulk PbTe. This experimental investigation is the first detailed study of MQW structures designed to improve ZT of thermoelectric materials and has resulted in a breakthrough in the decades-long ZT congruent to 1 barrier for a room-temperature thermoelectric material. A value of Z(2D)T > 1.2 has been achieved for these PbTe quantum wells.

引用

页码：1121 / 1127

页数：7

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