HRTEM observation of CdSe/ZnSe SQWs grown on vicinal GaAs substrate

被引：2

作者：

Nabetani, Y ^{[1
]}

Kobayashi, Y ^{[1
]}

Ito, Y ^{[1
]}

Kato, T ^{[1
]}

Matsumoto, T ^{[1
]}

机构：

[1] Yamanashi Univ, Dept Elect Engn, Kofu, Yamanashi 4008511, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2002年 / 237卷

关键词：

interfaces; surface structure; quantum wells; semiconducting II-VI materials;

D O I：

10.1016/S0022-0248(01)02368-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Microscopic structural properties of CdSc/ZnSe single quantum wells grown on vicinal GaAs substrate are investigated by cross-sectional high-resolution transmission electron microscope. The interface of ZnSe buffer and GaAs substrate, the surface of top ZnSe, and CdSe well Lire observed. At the ZnSe/GaAs interface, the lattice structure is strongly smeared, indicating that structures other than ZnSe and GaAs are formed. Stacking faults are generated at this region. A distinct step and terrace structure is observed at the surface of top ZnSe. The averaged terrace width coincides with the nominal value of 5degrees vicinal surface. Well layer is tilted with regard to the (200) lattice plane by 50, and no misfit dislocation is found. Strain mapping of the obtained lattice image is performed. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：1541 / 1544

页数：4

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