Air-stable n-channel copper hexachlorophthalocyanine for field-effect transistors

被引:35
|
作者
Ling, Mang-Mang
Bao, Zhenan
Erk, Peter
机构
[1] Stanford Univ, Dept Chem Engn, Stanford, CA 94305 USA
[2] BASF AG, D-67056 Ludwigshafen, Germany
关键词
D O I
10.1063/1.2362976
中图分类号
O59 [应用物理学];
学科分类号
摘要
The authors report air-stable n-channel transistor performance of copper hexachlorophthalocyanine (Cl16CuPc) organic semiconductor. The charge carrier mobility is about 0.01 cm(2)/V s for thin films deposited at an elevated substrate temperature. Effects of substrate temperature, substrate surface chemical treatment, thin film morphology, and crystallinity on device performance are investigated. No significant decrease in mobility and on/off ratio was observed for devices stored in ambient environment. (c) 2006 American Institute of Physics.
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页数:3
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