Modelling of optical properties of quantum wire laser in InGaAs/InP

被引：0

作者：

Gvozdic, DM ^{[1
]}

Schlachetzki, A ^{[1
]}

Nenadovic, NM ^{[1
]}

机构：

[1] Univ Belgrade, Fac Elect Engn, YU-11001 Belgrade, Yugoslavia

来源：

PROCEEDINGS OF THE ELEVENTH INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES, VOL 1 & 2 | 2002年 / 4746卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An efficient method for modelling the electronic structure and optical properties of quantum wires (QWRs) is proposed. The optical properties of an InGaAs/InP QWR laser are calculated in the framework of the k(.)p method, with the conduction-band nonparabolicity included for the first time. We show that high material gain can be achieved (8000 cm(-1)) at room temperatures for X polarization. However, due to a small confinement factor lasing can be achieved only at low temperatures (T=15K) which is verified by experiment.

引用

页码：317 / 321

页数：5

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