Modelling of optical properties of quantum wire laser in InGaAs/InP

被引：0
|
作者：
Gvozdic, DM [1 ]
Schlachetzki, A [1 ]
Nenadovic, NM [1 ]
机构：
[1] Univ Belgrade, Fac Elect Engn, YU-11001 Belgrade, Yugoslavia
来源：
PROCEEDINGS OF THE ELEVENTH INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES, VOL 1 & 2 | 2002年 / 4746卷
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An efficient method for modelling the electronic structure and optical properties of quantum wires (QWRs) is proposed. The optical properties of an InGaAs/InP QWR laser are calculated in the framework of the k(.)p method, with the conduction-band nonparabolicity included for the first time. We show that high material gain can be achieved (8000 cm(-1)) at room temperatures for X polarization. However, due to a small confinement factor lasing can be achieved only at low temperatures (T=15K) which is verified by experiment.
引用
收藏
页码：317 / 321
页数：5
相关论文
共 50 条
  • [1] Influence of temperature and optical confinement on threshold current of an InGaAs/InP quantum wire laser
    Gvozdic, DM
    Schlachetzki, A
    IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2003, 9 (03) : 732 - 735
  • [2] Optical characterization of InGaAs/InP quantum wire overgrowth by hydride VPE with InP
    Kerkel, K
    Braun, W
    Forchel, A
    Lourdudoss, S
    Seifert, W
    Carlsson, N
    Samuelson, L
    1997 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS - CONFERENCE PROCEEDINGS, 1997, : 467 - 470
  • [3] EFFECTS OF TWO-DIMENSIONAL CONFINEMENT ON THE OPTICAL-PROPERTIES OF INGAAS/INP QUANTUM WIRE STRUCTURES
    GERSHONI, D
    TEMKIN, H
    DOLAN, GJ
    DUNSMUIR, J
    CHU, SNG
    PANISH, MB
    APPLIED PHYSICS LETTERS, 1988, 53 (11) : 995 - 997
  • [4] Optical properties of an InGaAs-InP interdiffused quantum well
    Li, EH
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 1998, 34 (06) : 982 - 990
  • [5] Optical properties of asymmetric InGaAs/InP coupled quantum wells
    Ryan, DM
    Abram, RA
    Robbins, DJ
    IEE PROCEEDINGS-OPTOELECTRONICS, 2000, 147 (02): : 83 - 88
  • [6] Optical properties of stacked InGaAs sidewall quantum wires in InGaAsP/InP
    Zhou, D.
    Nötzel, R.
    Van Otten, F.W.M.
    Eijkemans, T.J.
    Wolter, J.H.
    Journal of Applied Physics, 2006, 99 (10):
  • [7] Optical properties of stacked InGaAs sidewall quantum wires in InGaAsP/InP
    Zhou, D
    Nötzel, R
    van Otten, FWM
    Eijkemans, TJ
    Wolter, JH
    JOURNAL OF APPLIED PHYSICS, 2006, 99 (10)
  • [8] Rashba effect in gated InGaAs/InP quantum wire structures
    Schäpers, T
    Knobbe, J
    Guzenko, VA
    van der Hart, A
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2004, 21 (2-4): : 933 - 936
  • [9] Rashba effect in strained InGaAs/InP quantum wire structures
    Schaepers, Th.
    Knobbe, J.
    van der Hart, A.
    Hardtdegen, H.
    SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS, 2003, 4 (01) : 19 - 25
  • [10] Controlling the optical properties of a laser pulse at λ=1.55μm in InGaAs\InP double coupled quantum well nanostructure
    Shiri, Jalil
    Malakzadeh, Abdollah
    JOURNAL OF THE EUROPEAN OPTICAL SOCIETY-RAPID PUBLICATIONS, 2017, 13
12345