Large magnetoresistance in magnetic tunnel junctions using Co-Mn-Al full Heusler alloy

被引：71

作者：

Kubota, H ^{[1
]}

Nakata, J ^{[1
]}

Oogane, M ^{[1
]}

Ando, Y ^{[1
]}

Sakuma, A ^{[1
]}

Miyazaki, T ^{[1
]}

机构：

[1] Tohoku Univ, Dept Appl Phys, Grad Sch Engn, Aoba Ku, Sendai, Miyagi 9808579, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2004年 / 43卷 / 7B期

关键词：

Heusler alloy; tunnel magnetoresistance; magnetic random access memory; spin polarization;

D O I：

10.1143/JJAP.43.L984

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Magnetic tunnel junctions with a stacking structure of Cr/Co-Mn-Al/Al-O/Co-Fe/Ir-Mn were fabricated using a UHV magnetron-sputtering machine. Co-Mn-Al films showed B2 structure, which involves partial disorder between Mn and Al sites. Tunnel magnetoresistance ratios at room temperature were 27% and 40% before and after annealing at 250degreesC, respectively. Those values are much higher than the ones obtained in previous experiments using half Heusler alloys.

引用

页码：L984 / L986

页数：3

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