Probing Local Strain at MX2-Metal Boundaries with Surface Plasmon-Enhanced Raman Scattering

被引:122
作者
Sun, Yinghui [1 ]
Liu, Kai [2 ,3 ]
Hong, Xiaoping [1 ]
Chen, Michelle [2 ]
Kim, Jonghwan [1 ]
Shi, Sufei [1 ,3 ]
Wu, Junqiao [2 ,3 ]
Zettl, Alex [1 ,3 ]
Wang, Feng [1 ,3 ]
机构
[1] Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA
[2] Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA
[3] Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Div Mat Sci, Berkeley, CA 94720 USA
基金
美国国家科学基金会;
关键词
Molybdenum disulfide; strain; Raman peak splitting; surface-enhanced Raman scattering; 2-DIMENSIONAL SEMICONDUCTORS; MOS2; TRANSISTORS; MONOLAYER MOS2; PHOTOLUMINESCENCE; BILAYER;
D O I
10.1021/nl5023767
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Interactions between metal and atomically thin two-dimensional (2D) materials can exhibit interesting physical behaviors that are of both fundamental interests and technological importance. In addition to forming a metalsemiconductor Schottky junction that is critical for electrical transport, metal deposited on 2D layered materials can also generate a local mechanical strain. We investigate the local strain at the boundaries between metal (Ag, Au) nanoparticles and MX2 (M = Mo, W; X = S) layers by exploiting the strong local field enhancement at the boundary in surface plasmon-enhanced Raman scattering (SERS). We show that the local mechanical strain splits both the in-plane vibration mode E2(g1) and the out-of-plane vibration mode A(1g) in monolayer MoS2, and activates the in-plane mode E1g that is normally forbidden in backscattering Raman process. In comparison, the effects of mechanical strain in thicker MoS2 layers are significantly weaker. We also observe that photoluminescence from the indirect bandgap transition (when the number of layers is =2) is quenched with the metal deposition, while a softened and broadened shoulder peak emerges close to the original direct-bandgap transition because of the mechanical strain. The strain at metalMX(2) boundaries, which locally modifies the electronic and phonon structures of MX2, can have important effects on electrical transport through the metalMX(2) contact.
引用
收藏
页码:5329 / 5334
页数:6
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