High-Q Piezoelectric Lamb Wave Resonators based on AlN Plates with Chamfered Corners

被引:6
|
作者
Lin, Chih-Ming [1 ]
Zou, Jie [1 ]
Chen, Yung-Yu [2 ]
Pisano, Albert P. [3 ]
机构
[1] Univ Calif Berkeley, Dept Mech Engn, Berkeley, CA 94720 USA
[2] Tatung Univ, Dept Mech Engn, Taipei 10452, Taiwan
[3] Univ Calif San Diego, Dept Mech & Aerosp Engn, San Diego, CA 92093 USA
来源
2015 IEEE INTERNATIONAL ULTRASONICS SYMPOSIUM (IUS) | 2015年
关键词
AlN; aluminum nitride; Lamb wave resonators; chamfered plate; finite element analysis; perfectly matched layer; anchor loss; quality factor; ANCHOR;
D O I
10.1109/ULTSYM.2015.0360
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A novel approach to the boost quality factor (Q) of Lamb wave resonators by chamfering the aluminum nitride (AlN) plate is investigated for the first time. It is well-known that the Q's of the AlN Lamb wave resonators are degraded due to energy dissipation through the support tethers. In this work, similar to the beveled edges used in AT-cut quartz resonators, the chamfered corners are utilized to trap vibration energy in the AlN plate to enhance the anchor Q's. Based on finite element analysis (FEA) simulated results, the AlN plate with chamfered corners can efficiently reduce mechanical vibrations in support tethers and trap more mechanical energy in the plate. The experimental results demonstrate that the loaded Q of the Lamb wave resonator is boosted from 2,041 to 3,016 and the minimum impedance is reduced from 87.4 Omega to 61.6 Omega by simply chamfering the AlN rectangular plate, showing a 1.48x increase in measured Q's.
引用
收藏
页数:4
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