Electrical Properties of Amorphous Zinc-Indium-Tin Oxide Semiconductor Thin-Film Transistors

被引：6

作者：

Li, Chih-Wei

Chang, Sheng-Po ^{[1
]}

Chang, Shoou-Jinn

机构：

[1] Natl Cheng Kung Univ, Inst Microelect, Tainan 70101, Taiwan

来源：

NANOSCIENCE AND NANOTECHNOLOGY LETTERS | 2014年 / 6卷 / 04期

关键词：

Zinc-Indium-Tin Oxide; Amorphous; Thin-Film Transistor; ZN;

D O I：

10.1166/nnl.2014.1765

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The electrical properties of transparent amorphous zinc-indium-tin oxide (a-ZITO) thin films and the characteristics of thin-film transistors (TFTs) based on these films were examined as functions of the ZITO chemical composition. The ZITO thin films were deposited by cosputtering. By adjusting the content ratio of ZnO and ITO, high-performance a-ZITO TFTs could be fabricated. The a-ZITO TFTs exhibited optimal performance when the a-ZITO film was deposited by sputtering ZnO at a power of 80 W and ITO at a power of 50 W, with the oxygen partial pressure being 4%. The chemical composition of the thin film that exhibited the optimal performance was Zn/In/Sn = 0.53:0.38:0.09. The ZITO TFTs exhibited enhanced-mode operation and a threshold voltage of 0.9 V, an on/off current ratio of 4.7 x 10(5), a subthreshold swing of 0.294 V/decade, and a field-effect mobility of 5.32 cm(2) V-1 s(-1).

引用

收藏

页码：273 / 278

页数：6

相关论文

共 28 条

[1] Electrical and band-gap properties of amorphous zinc-indium-tin oxide thin films [J].

Buchholz, D. B. ;

Proffit, D. E. ;

Wisser, M. D. ;

Mason, T. O. ;

Chang, R. P. H. .

PROGRESS IN NATURAL SCIENCE-MATERIALS INTERNATIONAL, 2012, 22 (01) :1-6

[2] Transparent Flexible Zinc-Indium-Tin Oxide Thin-Film Transistors Fabricated on Polyarylate Films [J].

Cheong, Woo-Seok ;

Bak, Jun-Yong ;

Kim, Hong Seung .

JAPANESE JOURNAL OF APPLIED PHYSICS, 2010, 49 (05) :05EB101-05EB104

[3] Bottom-Gate Transparent Zinc Oxide Thin Film Transistor Fabricated by Sol-Gel Spin Coating [J].

Cui, Haishan ;

Ding, Tao ;

Shi, Zeng Liang ;

Fang, Shengjiang ;

Chen, Guofeng ;

Xu, Xiaoyong ;

Xu, Chunxiang .

NANOSCIENCE AND NANOTECHNOLOGY LETTERS, 2013, 5 (02) :209-212

[4]

Cullity B. D., 1978, ELEMENTS XRAY DIFFRA

[5]

David C. P., 2008, THIN SOLID FILMS, V516, P5894

[6] Transparent thin-film transistors with zinc indium oxide channel layer [J].

Dehuff, NL ;

Kettenring, ES ;

Hong, D ;

Chiang, HQ ;

Wager, JF ;

Hoffman, RL ;

Park, CH ;

Keszler, DA .

JOURNAL OF APPLIED PHYSICS, 2005, 97 (06)

[7] Recent advances in ZnO transparent thin film transistors [J].

Fortunato, E ;

Barquinha, P ;

Pimentel, A ;

Gonçalves, A ;

Marques, A ;

Pereira, L ;

Martins, R .

THIN SOLID FILMS, 2005, 487 (1-2) :205-211

[8] Thin-film transistors with transparent amorphous zinc indium tin oxide channel layer [J].

Grover, M. S. ;

Hersh, P. A. ;

Chiang, H. Q. ;

Kettenring, E. S. ;

Wager, J. F. ;

Keszler, D. A. .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2007, 40 (05) :1335-1338

[9] Phosphorus Doping Effect in a Zinc Oxide Channel Layer to Improve the Performance of Oxide Thin-Film Transistors [J].

Han, Dong-Suk ;

Moon, Yeon-Keon ;

Lee, Sih ;

Kim, Kyung-Taek ;

Moon, Dae-Yong ;

Lee, Sang-Ho ;

Kim, Woong-Sun ;

Park, Jong-Wan .

JOURNAL OF ELECTRONIC MATERIALS, 2012, 41 (09) :2380-2386

[10] Carrier generation and inherent off-stoichiometry in Zn, Sn codoped indium oxide (ZITO) bulk and thin-film specimens [J].

Harvey, Steven P. ;

Mason, Thomas O. ;

Buchholz, D. Bruce ;

Chang, Robert P. H. ;

Korber, Christoph ;

Klein, Andreas .

JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 2008, 91 (02) :467-472