Crossbar RRAM Arrays: Selector Device Requirements During Read Operation

被引：192

作者：

Zhou, Jiantao ^{[1
]}

Kim, Kuk-Hwan ^{[1
]}

Lu, Wei ^{[1
]}

机构：

[1] Univ Michigan, Dept Elect Engn & Comp Sci, Ann Arbor, MI 48109 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2014年 / 61卷 / 05期

基金：

美国国家科学基金会;

关键词：

Crossbar; read margin; read scheme; resistive random access memory (RRAM); select device; sneak path;

D O I：

10.1109/TED.2014.2310200

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Passive crossbar resistive random access memory (RRAM) arrays require select devices with nonlinear I-V characteristics to address the sneak-path problem. Here, we present a systematical analysis to evaluate the performance requirements of select devices during the read operation of RRAM arrays for the proposed one-selector-one-resistor (1S1R) configuration with serially connected selector/storage element. We found high selector current density is critical and the selector nonlinearity (ON/OFF) requirement can be relaxed at present. Different read schemes were analyzed to achieve high read margin and low power consumption. Design optimizations of the sense resistance and the storage elements are also discussed.

引用

页码：1369 / 1376

页数：8

共 27 条

[1] Scaling constraints in nanoelectronic random-access memories [J].

Amsinck, CJ ;

Di Spigna, NH ;

Nackashi, DP ;

Franzon, PD .

NANOTECHNOLOGY, 2005, 16 (10) :2251-2260

[2]

[Anonymous], 2012, International Technology Roadmap for Semiconductors (ITRS)

[3]

[Anonymous], IEDM

[4]

[Anonymous], IEDM

[5]

Burr G. W., 2012, 2012 IEEE Symposium on VLSI Technology, P41, DOI 10.1109/VLSIT.2012.6242451

[6] RRAM Crossbar Array With Cell Selection Device: A Device and Circuit Interaction Study [J].

Deng, Yexin ;

Huang, Peng ;

Chen, Bing ;

Yang, Xiaolin ;

Gao, Bin ;

Wang, Juncheng ;

Zeng, Lang ;

Du, Gang ;

Kang, Jinfeng ;

Liu, Xiaoyan .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2013, 60 (02) :719-726

[7] Fundamental analysis of resistive nano-crossbars for the use in hybrid Nano/CMOS-memory [J].

Flocke, Alexander ;

Noll, Tobias G. .

ESSCIRC 2007: PROCEEDINGS OF THE 33RD EUROPEAN SOLID-STATE CIRCUITS CONFERENCE, 2007, :328-331

[8]

Gopalakrishnan K., 2010, P VLSIT, P205

[9] Bipolar Nonlinear Ni/TiO2/Ni Selector for 1S1R Crossbar Array Applications [J].

Huang, Jiun-Jia ;

Tseng, Yi-Ming ;

Hsu, Chung-Wei ;

Hou, Tuo-Hung .

IEEE ELECTRON DEVICE LETTERS, 2011, 32 (10) :1427-1429

[10]

Kawahara A., 2012, 2012 IEEE International Solid-State Circuits Conference (ISSCC), P432, DOI 10.1109/ISSCC.2012.6177078

← 1 2 3 →