Thermal and Thermomechanical Analysis of a 10 kV SiC MOSFET Package with Double-Sided Cooling

A double-side cooled 10 kV, 25 A SiC MOSFET package is proposed which utilizes a wirebond-less molybdenum interconnect to alleviate thermomechanical stress and improve reliability. An effective junction-to-case thermal resistance of 0.17 degrees C/VV is achieved, enabling the package to dissipate a heat flux at the MOSFET surface in excess of 200 W/cm(2) with less than 30 degrees C temperature rise from the device junction to the package exterior. Thermal and thermomechanical finite element simulations were carried out to select materials and manufacturing processes that ensure manageable thermomechanical stress levels are maintained during fabrication and operation. Simulations were verified with experimental results and the package successfully demonstrated 150 degrees C continuous operation without degradation.