Thomson effect in thermo-electro-magneto semiconductor medium during photothermal excitation process

被引:13
作者
Lotfy, Kh [1 ]
El-Bary, A. A. [2 ]
机构
[1] Zagazig Univ, Fac Sci, Dept Math, Zagazig, Egypt
[2] Arab Acad Sci & Technol, Basic & Appl Sci Dept, Alexandria, Egypt
关键词
Photothermal theory; Thomson effect; magnetic field; normal mode method; thermoelectric; semiconductors; GENERALIZED THERMOELASTICITY; WAVES; TEMPERATURE; FREQUENCY;
D O I
10.1080/17455030.2020.1838665
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The effect of Thomson heating on semiconductor medium is studied. Analytical discussions in the presence of thermoelectricity and magnetic field, in the context of photothermal transport process, are made. The interactions between plasma, thermoelectric, magnetic and elastic waves are taken into consideration. The governing equations are investigated in two-dimensional deformations of a homogenous, isotropic medium. The density of charge is taken only as a function of time of the induced electric current. The normal mode technique is used to obtain the physical quantities field under investigation. Some electro-mechanical loads and thermal effect through recombination process are applied at the free surface of semiconductor elastic medium. The distributions of physical fields in this phenomenon are discussed and represented graphically. The results have been discussed under the effects of thermoelectric parameter and Thomson parameter.
引用
收藏
页码:1784 / 1802
页数:19
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