Parameter Design of Three-level Converter Based on Series Connected HV-IGBTs

被引：0

作者：

Lu, Ting ^{[1
]}

Zhao, Zhengming ^{[1
]}

Yu, Hualong ^{[1
]}

Ji, Shiqi ^{[1
]}

Yuan, Liqiang ^{[1
]}

He, Fanbo ^{[1
]}

机构：

[1] Tsinghua Univ, Dept Elect Engn, State Key Lab Power Syst, Beijing 100084, Peoples R China

来源：

2012 15TH INTERNATIONAL CONFERENCE ON ELECTRICAL MACHINES AND SYSTEMS (ICEMS 2012) | 2012年

关键词：

HV-IGBT; parameter design; series connection; voltage balancing;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Although the maximum collector-emitter voltage of high voltage insulated gate bipolar transistor (HV-IGBT) reaches 3300V or higher, it still cannot satisfy the requirements of some high voltage high power converters. Applying power semiconductor devices in series connection can effectively improve the voltage rating and power rating of power electronic converter. The key issue of device series connection is voltage balancing in static switching state and dynamic switching state. In this paper, a three-level converter based on series connected HV-IGBTs is presented, its voltage balancing sub-circuits are analyzed, and the parameter design method for the converter is proposed. During the design process, component parameters of the three-level converter are calculated considering the influence of voltage balancing circuit. The proposed parameter design method is applied in the development of a three-level HV-IGBT (4500V/600A) series connection test platform with 10000V rated dc-link voltage. Experimental results verify the validity of the proposed method.

引用

页数：5

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