Kapitza Resistance at the Two-Dimensional Electron Gas Interface

被引：0

作者：

Wilson, Adam A. ^{[1
,2
]}

Jankowski, Nicholas R. ^{[1
]}

Nouketcha, Franklin ^{[1
,3
]}

Tompkins, Randy ^{[1
]}

机构：

[1] US Army, Res Lab, Sensors & Elect Devices Directorate, Adelphi, MD 20783 USA

[2] Natl Acad Sci, Natl Res Council, Washington, DC 20418 USA

[3] Oak Ridge Associated Univ, Oak Ridge, TN USA

来源：

PROCEEDINGS OF THE 2019 EIGHTEENTH IEEE INTERSOCIETY CONFERENCE ON THERMAL AND THERMOMECHANICAL PHENOMENA IN ELECTRONIC SYSTEMS (ITHERM 2019) | 2019年

关键词：

Two-dimensional electron gas; 2DEG; Kapitza resistance; interface thermal resistance; GaN HEMT; AlxGa(1-x)N; FDTR; finite element modeling; wide bandgap; thermal conductivity; THERMAL-BOUNDARY RESISTANCE; BUFFER LAYER; CONDUCTIVITY; FILMS; ALGAN;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Thermal resistance at interfaces in high electron mobility transistors (such as GaN-based devices) presents a significant problem. Recent investigations report much greater thermal resistance between GaN and substrate than theory predicts. However, in devices that leverage a two-dimensional electron gas (2DEG), such as the interface between AlxGa(1-x)N and GaN, little exploration has been performed regarding the effect of thermal resistance at the interface where the 2DEG is formed, and there are no experimental reports of the value of interface thermal resistance between AlxGa(1-x)N and GaN. This work reports interface thermal resistance between AlxGa(1-x)N and GaN to be 12.8 m(2)K/GW, and projects the effect of this resistance on temperature buildup in GaN HEMT devices.

引用

页码：766 / 771

页数：6

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