Effect of electric field doping on the anisotropic magnetoresistance in doped manganites

被引：49

作者：

Hong, X. ^{[1
]}

Yau, J. -B.

Hoffman, J. D.

Ahn, C. H.

Bason, Y.

Klein, L.

机构：

[1] Yale Univ, Dept Appl Phys, New Haven, CT 06520 USA

[2] Bar Ilan Univ, Dept Phys, IL-52100 Ramat Gan, Israel

来源：

PHYSICAL REVIEW B | 2006年 / 74卷 / 17期

关键词：

D O I：

10.1103/PhysRevB.74.174406

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have modulated the anisotropic magnetoresistance (AMR) in 3-4 nm manganite films using the ferroelectric field effect-a method that electrostatically varies the carrier density without affecting the lattice distortion. While significant changes have been induced in T-C and rho, the AMR ratio remains the same when the magnetic state is not changed. This scaling behavior is in striking contrast to chemical doping results, where similar modulation of the carrier concentration (similar to 0.1/Mn) changes the AMR ratio by >= 30%. The results reveal unambiguously the dominant role of chemical distortion in determining the AMR in manganites.

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页数：5

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