Increase in Reverse Operation Limit by Barrier Height Control of Diamond Schottky Barrier Diode

被引：63

作者：

Umezawa, Hitoshi ^{[1
]}

Ikeda, Kazuhiro ^{[1
]}

Kumaresan, Ramanujam ^{[1
]}

Tatsumi, Natsuo ^{[2
]}

Shikata, Shin-ichi ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058568, Japan

[2] Sumitomo Elect Ind, Itami, Hyogo 6640016, Japan

来源：

IEEE ELECTRON DEVICE LETTERS | 2009年 / 30卷 / 09期

关键词：

Baliga's figure of merit; diamond; operation limit; reach through; reverse leakage current; Schottky barrier diode (SBD); VOLTAGE; BREAKDOWN; OZONE;

D O I：

10.1109/LED.2009.2026439

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Diamond is a promising material for high-power and low-loss semiconductor devices. However, the reported reverse blocking electric field of diamond-based power devices is as low as 2 MV/cm, and their performance is worse than ideal. We have developed reach-through-type Schottky barrier diodes (SBDs) with various Schottky barrier heights (SBHs) by changing metals. SBDs with high SBH show low leakage current and high operation limit of 3.1 MV/cm. This indicates that the reverse operation limit of diamond SBDs is determined not by leakage through defects but by carrier transport through the barrier. Reduction of specific on-resistance increases Baliga's figure of merit to 51 MW/cm(2), which is tenfold higher than the Si limit.

引用

页码：960 / 962

页数：3

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