Linear Mode CMOS Compatible p-n Junction Avalanche Photo diode With Operating Voltage Below 9V

被引：0

作者：

Hossain, Md. Mottaleb ^{[1
]}

Zarkesh-Ha, Payman

Hayat, Majeed M.

机构：

[1] Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA

来源：

2015 PHOTONICS CONFERENCE (IPC) | 2015年

关键词：

CMOS; linear mode; silicon; APDs; dead space; breakdown; mean gain; spectral response; smart lighting; DEAD SPACE; NOISE; GAIN;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reports linear-mode p-n junction silicon avalanche photodiodes (APD) fabricated in 1 mu m standard CMOS process. Measured mean gain of similar to 50 was obtained at a sufficiently low operating voltage of 8.7 V.

引用

页数：2