Linear Mode CMOS Compatible p-n Junction Avalanche Photo diode With Operating Voltage Below 9V

被引：0
|
作者：
Hossain, Md. Mottaleb [1 ]
Zarkesh-Ha, Payman
Hayat, Majeed M.
机构：
[1] Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA
来源：
2015 PHOTONICS CONFERENCE (IPC) | 2015年
关键词：
CMOS; linear mode; silicon; APDs; dead space; breakdown; mean gain; spectral response; smart lighting; DEAD SPACE; NOISE; GAIN;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper reports linear-mode p-n junction silicon avalanche photodiodes (APD) fabricated in 1 mu m standard CMOS process. Measured mean gain of similar to 50 was obtained at a sufficiently low operating voltage of 8.7 V.
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页数：2
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