Single-Electron Transfer by Inter-Dopant Coupling Tuning in Doped Nanowire Silicon-on-Insulator Field-Effect Transistors

被引：21

作者：

Moraru, Daniel ^{[1
]}

Ligowski, Maciej ^{[1
]}

Yokoi, Kiyohito ^{[1
]}

Mizuno, Takeshi ^{[1
]}

Tabe, Michiharu ^{[1
]}

机构：

[1] Shizuoka Univ, Elect Res Inst, Naka Ku, Hamamatsu, Shizuoka 4328011, Japan

来源：

APPLIED PHYSICS EXPRESS | 2009年 / 2卷 / 07期

关键词：

QUANTUM DOTS; DEVICE;

D O I：

10.1143/APEX.2.071201

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate tunable single-electron turnstile operation in doped-nanowire silicon-on-insulator field-effect transistors. In these structures, electron transport occurs through dopant-induced quantum dots. We show that the substrate silicon can be used as a back gate to modulate the inter-dot coupling, which dictates the overlap between Coulomb domains in the charge stability diagrams of these devices. Since this overlap is a necessary requirement for single-electron turnstile, this procedure allows the optimization of the conditions for single-electron turnstile in doped-nanowire field-effect transistors. (C) 2009 The Japan Society of Applied Physics

引用

页数：3

共 50 条

[21] Accuracy evaluation of single-electron shuttle transfer in Si nanowire metal-oxide-semiconductor field-effect transistors
Yamahata, Gento
Nishiguchi, Katsuhiko
Fujiwara, Akira
APPLIED PHYSICS LETTERS, 2011, 98 (22)
[22] Experimental Observation of Quantum Confinement Effect in ⟨110⟩ and ⟨100⟩ Silicon Nanowire Field-Effect Transistors and Single-Electron/Hole Transistors Operating at Room Temperature
Suzuki, Ryota
Nozue, Motoki
Saraya, Takuya
Hiramoto, Toshiro
JAPANESE JOURNAL OF APPLIED PHYSICS, 2013, 52 (10)
[23] RADIATION-HARDENED SILICON-ON-INSULATOR COMPLEMENTARY JUNCTION FIELD-EFFECT TRANSISTORS
TSAUR, BY
CHOI, HK
IEEE ELECTRON DEVICE LETTERS, 1986, 7 (05) : 324 - 326
[24] High temperature study of flexible silicon-on-insulator fin field-effect transistors
Diab, Amer
Sevilla, Galo A. Torres
Ghoneim, Mohamed T.
Hussain, Muhammad M.
APPLIED PHYSICS LETTERS, 2014, 105 (13)
[25] Analytical model of single-gate silicon-on-insulator (SOI) tunneling field-effect transistors (TFETs)
Lee, Min Jin
Choi, Woo Young
SOLID-STATE ELECTRONICS, 2011, 63 (01) : 110 - 114
[26] Tunneling spectroscopy of electron subbands in thin silicon-on-insulator metal-oxide-semiconductor field-effect transistors
Noborisaka, J.
Nishiguchi, K.
Kageshima, H.
Ono, Y.
Fujiwara, A.
APPLIED PHYSICS LETTERS, 2010, 96 (11)
[27] Single-electron transistor using self-aligned sidewall Spacer gates on silicon-on-insulator nanowire
Hu, SF
Wu, YC
Sung, CL
Chang, CY
Huang, TY
2003 THIRD IEEE CONFERENCE ON NANOTECHNOLOGY, VOLS ONE AND TWO, PROCEEDINGS, 2003, : 573 - 576
[28] Simulation of the impact of heavy charged particles on the characteristics of field-effect silicon-on-insulator transistors
Glushko, A. A.
Zinchenko, L. A.
Shakhnov, V. A.
JOURNAL OF COMMUNICATIONS TECHNOLOGY AND ELECTRONICS, 2015, 60 (10) : 1134 - 1140
[29] RADIATION-HARDENED SILICON-ON-INSULATOR COMPLEMENTARY JUNCTION FIELD-EFFECT TRANSISTORS.
Tsaur, Bor-Yeu
Choi, Hong K.
1600, (EDL-7):
[30] Simulation of the impact of heavy charged particles on the characteristics of field-effect silicon-on-insulator transistors
A. A. Glushko
L. A. Zinchenko
V. A. Shakhnov
Journal of Communications Technology and Electronics, 2015, 60 : 1134 - 1140

← 1 2 3 4 5 →