Electric field induced recombination centers in GaAs

被引：0
|
作者：
Noro, J
Machida, K
Ikeda, Y
Kawaharazuka, A
Horikoshi, Y
机构：
[1] Waseda Univ, Sch Sci & Engn, Shinjuku Ku, Tokyo 1698555, Japan
[2] Waseda Univ, Japan & Kagami Mem Lab Mat Sci & Technol, Shinjuku Ku, Tokyo 1690072, Japan
来源：
COMPOUND SEMICONDUCTORS 1999 | 2000年 / 166期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We have investigated the lateral electric field effect on the photoluminescence(PL) characteristics of GaAs single layers grown under the different conditions. In all samples, we have observed the quenching of PL spectra at low temperatures even when the applied electric field is much lower than that required for the dissociation of the excitons. To explain this phenomenon, we propose a model of new recombination center formation by considering the displacement of charged atoms.
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页码：123 / 126
页数：4
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