Electric field induced recombination centers in GaAs

被引：0
|
作者：
Noro, J
Machida, K
Ikeda, Y
Kawaharazuka, A
Horikoshi, Y
机构：
[1] Waseda Univ, Sch Sci & Engn, Shinjuku Ku, Tokyo 1698555, Japan
[2] Waseda Univ, Japan & Kagami Mem Lab Mat Sci & Technol, Shinjuku Ku, Tokyo 1690072, Japan
来源：
COMPOUND SEMICONDUCTORS 1999 | 2000年 / 166期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We have investigated the lateral electric field effect on the photoluminescence(PL) characteristics of GaAs single layers grown under the different conditions. In all samples, we have observed the quenching of PL spectra at low temperatures even when the applied electric field is much lower than that required for the dissociation of the excitons. To explain this phenomenon, we propose a model of new recombination center formation by considering the displacement of charged atoms.
引用
收藏
页码：123 / 126
页数：4
相关论文
共 50 条
  • [1] Electric field induced recombination centers in GaAs
    Kawaharazuka, A
    Shiraishi, K
    Horikoshi, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (3B): : 1622 - 1625
  • [2] Irradiation induced recombination centers in GaAs solar cells.
    de Angelis, N
    Bourgoin, JC
    PROCEEDINGS OF THE FIFTH EUROPEAN SPACE POWER CONFERENCE (ESPC), VOLS 1 AND 2, 1998, 416 : 533 - 537
  • [3] Electric field distribution and exciton recombination line shape in GaAs
    Schuster, J.
    Kim, T. Y.
    Batke, E.
    Reuter, D.
    Wieck, A. D.
    MATERIALS RESEARCH EXPRESS, 2016, 3 (05):
  • [4] Electric-Field-Enhanced Neutralization of Deep Centers in GaAs
    Eshchenko, D. G.
    Storchak, V. G.
    Cottrell, S. P.
    Morenzoni, E.
    PHYSICAL REVIEW LETTERS, 2009, 103 (21)
  • [5] DIFFUSION OF RADIATIVE RECOMBINATION CENTERS IN GAAS
    VOROBKALO, FM
    GLINCHUK, KD
    PROKHOROVICH, AV
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 7 (05): : 610 - 612
  • [6] IDENTIFICATION OF RECOMBINATION CENTERS IN LEC GAAS
    WADA, K
    IKUTA, K
    INOUE, N
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (09) : C403 - C403
  • [7] ELECTRIC-FIELD DEPENDENCE OF RECOMBINATION KINETICS IN REACTION CENTERS OF PHOTOSYNTHETIC BACTERIA
    POPOVIC, ZD
    KOVACS, GJ
    VINCETT, PS
    ALEGRIA, G
    DUTTON, PL
    CHEMICAL PHYSICS, 1986, 110 (2-3) : 227 - 237
  • [8] Recombination centers in electron irradiated Si and GaAs
    Universite Paris 7, Paris, France
    Mater Sci Forum, pt 1 (629-634):
  • [9] RECOGNITION OF NONRADIATIVE RECOMBINATION CENTERS IN SEMIINSULATING GAAS
    TUZEMEN, S
    BREIVIK, L
    BROZEL, MR
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1992, 7 (1A) : A36 - A40
  • [10] ELECTRIC FIELD-INDUCED NEGATIVE PHOTOCONDUCTIVITY IN GAAS
    WIEDER, HH
    HANSON, CM
    ZULEEG, R
    JOURNAL OF APPLIED PHYSICS, 1986, 59 (11) : 3911 - 3913
12345