A simplified broad-band large-signal nonquasi-static table-based FET model

被引：40

作者：

Fernández-Barciela, M ^{[1
]}

Tasker, PJ

Campos-Roca, Y

Demmler, M

Massler, H

Sánchez, E

Currás-Francos, MC

Schlechtweg, M

机构：

[1] Univ Vigo, ETSI Telecomun, Dept Tecnol Comun, E-36200 Vigo, Spain

[2] Univ Wales Coll Cardiff, Sch Engn, Div Elect, Cardiff CF2 3TF, S Glam, Wales

[3] Fraunhofer Inst Angew Festkorperphys, D-79108 Freiburg, Germany

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 2000年 / 48卷 / 03期

关键词：

FET's; modeling;

D O I：

10.1109/22.826838

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, a simplified nonquasi-static table-based approach is developed for high-frequency broad-band large-signal field-effect-transistor modeling. As well as low-frequency dispersion, the quadratic frequency dependency of the y-parameters at high frequencies is taken into account through the use of linear delays, This model is suitable for applications related with nonlinear microwave computer-aided design and can be both easily extracted from de and s-parameter measurements and implemented in commercially available simulation tools. Model formulation, small-signal, and large-signal validation will be described in this paper, Excellent results are obtained from de up to the device f(T) frequencies, even when f(T) is as high as 100 GHz.

引用

页码：395 / 405

页数：11

共 4 条

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[4] A Novel Table Based Large Signal Model For FETs Based On Non-Quasi-Static Effect High Order Sources
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