Sustainable p-type copper selenide solar material with ultra-large absorption coefficient

被引:29
作者
Chen, Erica M. [1 ]
Williams, Logan [1 ]
Olvera, Alan [1 ]
Zhang, Cheng [2 ]
Zhang, Mingfei [1 ]
Shi, Guangsha [1 ]
Heron, John T. [1 ]
Qi, Liang [1 ]
Guo, L. Jay [2 ]
Kioupakis, Emmanouil [1 ]
Poudeu, Pierre F. P. [1 ]
机构
[1] Univ Michigan, Dept Mat Sci & Engn, Ann Arbor, MI 48109 USA
[2] Univ Michigan, Dept Elect Engn & Comp Sci, Ann Arbor, MI 48109 USA
基金
美国国家科学基金会;
关键词
INITIO MOLECULAR-DYNAMICS; TOTAL-ENERGY CALCULATIONS; OPTICAL-PROPERTIES; CONVERSION EFFICIENCY; CRYSTAL-STRUCTURE; FILM; CELL; SEMICONDUCTORS; CU2ZNSNS4; SILICON;
D O I
10.1039/c8sc00873f
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Earth-abundant solar absorber materials with large optical absorption coefficients in the visible enable the fabrication of low-cost high-efficiency single and multi-junction thin-film solar cells. Here, we report a new p-type semiconductor, Cu4TiSe4 (CTSe), featuring indirect (1.15 eV) and direct (1.34 eV) band gaps in the optimal range for solar absorber materials. CTSe crystallizes in a new noncentrosymmetric cubic structure (space group F43c) in which CuSe4 tetrahedra share edges and corners to form octahedral anionic clusters, [Cu4Se4](4-), which in turn share corners to build the three-dimensional framework, with Ti4+ ions located at tetrahedral interstices within the channels. The unique crystal structure and the Ti 3d orbital character of the conduction band of CTSe give rise to near-optimal band gap values and ultra-large absorption coefficients (larger than 10(5) cm(-1)) throughout the visible range, which are promising for scalable low-cost high-efficiency CTSe-based thin-film solar cells.
引用
收藏
页码:5405 / 5414
页数:10
相关论文
共 54 条
[11]  
Heyd J, 2006, J CHEM PHYS, V124, DOI [10.1063/1.2204597, 10.1063/1.1564060]
[12]   Survey of methods to characterize thin absorbing films with Spectroscopic Ellipsometry [J].
Hilfiker, James N. ;
Singh, Neha ;
Tiwald, Tom ;
Convey, Diana ;
Smith, Steven M. ;
Baker, Jeffrey H. ;
Tompkins, Harland G. .
THIN SOLID FILMS, 2008, 516 (22) :7979-7989
[13]   ELECTRICAL AND OPTICAL-PROPERTIES OF STANNITE-TYPE QUATERNARY SEMICONDUCTOR THIN-FILMS [J].
ITO, K ;
NAKAZAWA, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1988, 27 (11) :2094-2097
[14]   New world record efficiency for Cu(In,Ga)Se2 thin-film solar cells beyond 20% [J].
Jackson, Philip ;
Hariskos, Dimitrios ;
Lotter, Erwin ;
Paetel, Stefan ;
Wuerz, Roland ;
Menner, Richard ;
Wischmann, Wiltraud ;
Powalla, Michael .
PROGRESS IN PHOTOVOLTAICS, 2011, 19 (07) :894-897
[15]   Effect of annealing on conversion efficiency of nanostructured CdS/CuInSe2 heterojunction thin film solar cell prepared by chemical ion exchange route at room temperature [J].
Joshi, Rajesh A. ;
Taur, Vidya S. ;
Sharma, Ramphal .
MATERIALS RESEARCH BULLETIN, 2012, 47 (09) :2206-2211
[16]   Development of CZTS-based thin film solar cells [J].
Katagiri, Hironori ;
Jimbo, Kazuo ;
Maw, Win Shwe ;
Oishi, Koichiro ;
Yamazaki, Makoto ;
Araki, Hideaki ;
Takeuchi, Akiko .
THIN SOLID FILMS, 2009, 517 (07) :2455-2460
[17]  
Kayes B. M., 2011, P 37 IEEE
[18]   Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set [J].
Kresse, G ;
Furthmuller, J .
PHYSICAL REVIEW B, 1996, 54 (16) :11169-11186
[19]   ABINITIO MOLECULAR-DYNAMICS FOR LIQUID-METALS [J].
KRESSE, G ;
HAFNER, J .
PHYSICAL REVIEW B, 1993, 47 (01) :558-561
[20]   From ultrasoft pseudopotentials to the projector augmented-wave method [J].
Kresse, G ;
Joubert, D .
PHYSICAL REVIEW B, 1999, 59 (03) :1758-1775