Tunneling and nonlinear transport in a low-dimensional vertically coupled GaAs/AlGaAs system

被引：3

作者：

Bielejec, E. ^{[1
]}

Seamons, J. A. ^{[1
]}

Reno, J. L. ^{[1
]}

Lyo, S. K. ^{[1
]}

Lilly, M. P. ^{[1
]}

机构：

[1] Sandia Natl Labs, Albuquerque, NM 87185 USA

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2006年 / 34卷 / 1-2期

关键词：

quantum wire; tunnelling; nonlinear transport; quantum wells; SPECTROSCOPY; WIRES;

D O I：

10.1016/j.physe.2006.03.109

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We report low-dimensional tunneling in an independently contacted vertically coupled quantum wire system. This nanostructure is fabricated in a high-quality GaAs/AlGaAs parallel double quantum well heterostructure. Using a novel flip chip technique to align top and bottom split gates to form low-dimensional constrictions in each of the independently contacted quantum wells we explicitly control the subband occupation of the individual wires. Our designed geometry includes simultaneous measurement of both the 2D-2D and 1D-1D tunneling regimes. In addition to the expected 2D-2D tunneling results, we have found additional tunneling features that are related to the ID quantum wires. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：433 / 436

页数：4

共 14 条

[1] Tunneling Spectroscopy of the Elementary Excitations in a One-Dimensional Wire [J].