Interface screening and imprint in poly(vinylidene fluoride/trifluoroethylene) ferroelectric field effect transistors

被引：50

作者：

Lazareva, I. ^{[1
]}

Koval, Y. ^{[1
]}

Mueller, P. ^{[1
]}

Mueller, K. ^{[2
]}

Henkel, K. ^{[2
]}

Schmeisser, D. ^{[2
]}

机构：

[1] Univ Erlangen Nurnberg, Dept Phys, D-91058 Erlangen, Germany

[2] Brandenburg Tech Univ Cottbus, Lehrstuhl Angew Phys Sensor, D-03046 Cottbus, Germany

来源：

JOURNAL OF APPLIED PHYSICS | 2009年 / 105卷 / 05期

关键词：

dielectric polarisation; ferroelectric capacitors; ferroelectric switching; ferroelectric thin films; field effect transistors; polymer films; PBZRXTI1-XO3; THIN-FILMS; PERFORMANCE; POLYMER; PHYSICS; ORIGIN; MODEL;

D O I：

10.1063/1.3088887

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigated the imprint effect in ferroelectric capacitors and field effect transistors (FETs) with a poly(vinylidene fluoride/trifluoroethylene) [P(VDF-TrFE)] ferroelectric insulator. The shift in switching voltages and the change in the ferroelectric FET (FeFET) channel conductance were measured as a function of time and the thickness of the ferroelectric layer. Analyzing our experimental data, we show that the imprint originates from interface-induced processes, which effectively screen polarization charges in P(VDF-TrFE). This phenomenon significantly influences the retention of FeFET channel conductance and the memory functionality of FeFET with P(VDF-TrFE).

引用

页数：5

共 17 条

[1] Physics of thin-film ferroelectric oxides [J].

Dawber, M ;

Rabe, KM ;

Scott, JF .

REVIEWS OF MODERN PHYSICS, 2005, 77 (04) :1083-1130

[2] FERROELECTRIC PROPERTIES OF VINYLIDENE FLUORIDE COPOLYMERS [J].

FURUKAWA, T .

PHASE TRANSITIONS, 1989, 18 (3-4) :143-211

[3] The interface screening model as origin of imprint in PbZrxTi1-xO3 thin films.: I.: Dopant, illumination, and bias dependence [J].

Grossmann, M ;

Lohse, O ;

Bolten, D ;

Boettger, U ;

Schneller, T ;

Waser, R .

JOURNAL OF APPLIED PHYSICS, 2002, 92 (05) :2680-2687

[4] The interface screening model as origin of imprint in PbZrxTi1-xO3 thin films.: II.: Numerical simulation and verification [J].

Grossmann, M ;

Lohse, O ;

Bolten, D ;

Boettger, U ;

Waser, R .

JOURNAL OF APPLIED PHYSICS, 2002, 92 (05) :2688-2696

[5] Conductance enhancement of polymethylmethacrylate bombarded by low-energy ions [J].

Koval, Y ;

Fistul, MV ;

Müller, P .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2005, 23 (05) :1375-1378

[6] Mechanism of etching and surface relief development of PMMA under low-energy ion bombardment [J].

Koval, Y .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2004, 22 (02) :843-851

[7]

KOVAL Y, UNPUB

[8] Graphitization of polymer surfaces by low-energy ion irradiation [J].

Lazareva, I. ;

Koval, Y. ;

Alam, M. ;

Stroemsdoerfer, S. ;

Mueller, P. .

APPLIED PHYSICS LETTERS, 2007, 90 (26)

[9] Device modeling of ferroelectric memory field-effect transistor (FeMFET) [J].

Lue, HT ;

Wu, CJ ;

Tseng, TY .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2002, 49 (10) :1790-1798

[10] PHYSICS OF THE FERROELECTRIC NONVOLATILE MEMORY FIELD-EFFECT TRANSISTOR [J].

MILLER, SL ;

MCWHORTER, PJ .

JOURNAL OF APPLIED PHYSICS, 1992, 72 (12) :5999-6010

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