Strong quantum-confinement effects in the conduction band of germanium nanocrystals

被引:125
作者
Bostedt, C
van Buuren, T
Willey, TM
Franco, N
Terminello, LJ
Heske, C
Möller, T
机构
[1] Lawrence Livermore Natl Lab, Livermore, CA 94550 USA
[2] Univ Hamburg, Inst Expt Phys, Hamburg, Germany
[3] Univ Nevada, Dept Chem, Las Vegas, NV 89154 USA
[4] DESY, Hamburger Synchrotronstrahlungslab, D-2000 Hamburg, Germany
关键词
D O I
10.1063/1.1751616
中图分类号
O59 [应用物理学];
学科分类号
摘要
Quantum-confinement effects in the conduction band of deposited germanium nanocrystals are measured to be greater than in similar-sized silicon nanocrystals. The germanium particles are condensed out of the gas phase and their electronic properties are determined with x-ray absorption spectroscopy. The conduction band edge shifts range from 0.2 eV for 2.7 nm particles up to 1.1 eV for 1.2 nm particles. (C) 2004 American Institute of Physics.
引用
收藏
页码:4056 / 4058
页数:3
相关论文
共 16 条
[1]   Perspectives on the physical chemistry of semiconductor nanocrystals [J].
Alivisatos, AP .
JOURNAL OF PHYSICAL CHEMISTRY, 1996, 100 (31) :13226-13239
[2]   Evidence for cubic phase in deposited germanium nanocrystals [J].
Bostedt, C ;
van Buuren, T ;
Plitzko, JM ;
Möller, T ;
Terminello, LJ .
JOURNAL OF PHYSICS-CONDENSED MATTER, 2003, 15 (07) :1017-1028
[3]  
BUUREN TV, 1998, PHYS REV LETT, V80, P3803, DOI DOI 10.1103/PHYSREVLETT.80.3803
[4]   X-ray absorption at Ge L3 edges as a tool to investigate Ge/Si(001) interfaces and heterostructures [J].
Castrucci, P ;
Gunnella, R ;
De Crescenzi, M ;
Sacchi, M ;
Dufour, G ;
Rochet, F .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (03) :1616-1620
[5]   Optical properties of Si-Ge semiconductor nano-onions [J].
Hill, NA ;
Pokrant, S ;
Hill, AJ .
JOURNAL OF PHYSICAL CHEMISTRY B, 1999, 103 (16) :3156-3161
[6]   FIRST EXPERIMENTAL RESULTS FROM IBM/TENN/TULANE/LLNL/LBL UNDULATOR BEAMLINE AT THE ADVANCED LIGHT-SOURCE [J].
JIA, JJ ;
CALLCOTT, TA ;
YURKAS, J ;
ELLIS, AW ;
HIMPSEL, FJ ;
SAMANT, MG ;
STOHR, J ;
EDERER, DL ;
CARLISLE, JA ;
HUDSON, EA ;
TERMINELLO, LJ ;
SHUH, DK ;
PERERA, RCC .
REVIEW OF SCIENTIFIC INSTRUMENTS, 1995, 66 (02) :1394-1397
[7]  
Min KS, 1996, APPL PHYS LETT, V68, P2511, DOI 10.1063/1.115838
[8]   Quantum confinement in germanium nanocrystals [J].
Niquet, YM ;
Allan, G ;
Delerue, C ;
Lannoo, M .
APPLIED PHYSICS LETTERS, 2000, 77 (08) :1182-1184
[9]   SELF-CONSISTENT AUGMENTED-PLANE-WAVE BAND-STRUCTURE CALCULATIONS OF SI AND GE WITH OVERLAPPING SPHERES [J].
PAPACONSTANTOPOULOS, DA .
PHYSICAL REVIEW B, 1983, 27 (04) :2569-2572
[10]   Dark excitons due to direct Coulomb interactions in silicon quantum dots [J].
Reboredo, FA ;
Franceschetti, A ;
Zunger, A .
PHYSICAL REVIEW B, 2000, 61 (19) :13073-13087