Impurity binding energy for δ-doped quantum well structures

被引：2

作者：

Tulupenko, V. ^{[1
]}

Duque, C. A. ^{[2
]}

Demediuk, R. ^{[1
]}

Fomina, O. ^{[1
]}

Akimov, V. ^{[1
,2
]}

Belykh, V. ^{[1
]}

Dmitrichenko, T. ^{[1
]}

Poroshin, V. ^{[3
]}

机构：

[1] Donbass State Engn Acad, Dept Phys, UA-84313 Kramatorsk, Ukraine

[2] Univ Antioquia UdeA, Inst Fis, Fac Ciencias Exactas & Nat, Grp Mat Condensada UdeA, Medellin, Colombia

[3] Natl Acad Sci, Inst Phys, UA-80028 Kiev, Ukraine

来源：

BULLETIN OF MATERIALS SCIENCE | 2014年 / 37卷 / 06期

关键词：

Quantum well; impurity binding energy; delta-doping; STATES; SI;

D O I：

10.1007/s12034-014-0082-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The binding energy of an impurity delta layer situated either in the centre or at the edge of a quantum well (QW) is theoretically considered for the example of n-type Si0.8Ge0.2/Si/Si0.8Ge0.2 QW doped with phosphorus. Calculations are made for the case of not so big impurity concentrations, when impurity bands are not yet formed and it is still possible to treat impurity as isolated ones. It is shown on the base of self-consistent solution of Schrodinger, Poisson and electro-neutrality equations that impurity binding energy is dependent on the degree of impurity ionization and the most noticeably for the case of edge-doped QWs.

引用

页码：1347 / 1351

页数：5

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