Performance Enhancement of Tunnel Field-Effect Transistors by Synthetic Electric Field Effect

被引：50

作者：

Morita, Yukinori ^{[1
]}

Mori, Takahiro ^{[1
]}

Migita, Shinji ^{[1
]}

Mizubayashi, Wataru ^{[1
]}

Tanabe, Akihito ^{[1
]}

Fukuda, Koichi ^{[1
]}

Matsukawa, Takashi ^{[1
]}

Endo, Kazuhiko ^{[1
]}

O'uchi, Shinichi ^{[1
]}

Liu, Yong Xun ^{[1
]}

Masahara, Meishoku ^{[1
]}

Ota, Hiroyuki ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Nanoelect Res Inst, Green Nanoelect Ctr, Tsukuba, Ibaraki 3058569, Japan

来源：

IEEE ELECTRON DEVICE LETTERS | 2014年 / 35卷 / 07期

基金：

日本学术振兴会;

关键词：

Tunnel FET (TFET); epitaxial growth; silicon; drain current; FinFET;

D O I：

10.1109/LED.2014.2323337

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, we propose a synthetic electric field (SE) effect to enhance the performance of tunnel field-effect transistors (TFETs). The novel SE-TFET architecture utilizes both horizontal and vertical electric fields induced by a gate electrode that is wrapped around an ultrathin epitaxial channel. The drain current of the SE-TFET is increased up to 100 times in comparison with those of conventional TFETs. The subthreshold slope of the SE-TFET also improved, and enhanced to 52 mV/decade by scaling the channel width and channel thickness.

引用

页码：792 / 794

页数：3

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