Beating of Exciton-Dressed States in a Single Semiconductor InGaAs/GaAs Quantum Dot

被引：42

作者：

Boyle, S. J. ^{[1
]}

Ramsay, A. J. ^{[1
]}

Fox, A. M. ^{[1
]}

Skolnick, M. S. ^{[1
]}

Heberle, A. P. ^{[2
,3
]}

Hopkinson, M. ^{[4
]}

机构：

[1] Univ Sheffield, Dept Phys & Astron, Sheffield S3 7RH, S Yorkshire, England

[2] Univ Pittsburgh, Dept Phys & Astron, Pittsburgh, PA 15260 USA

[3] Corning Inc, Sullivan Pk R&D Ctr, Corning, NY 14831 USA

[4] Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England

来源：

PHYSICAL REVIEW LETTERS | 2009年 / 102卷 / 20期

关键词：

RABI OSCILLATIONS;

D O I：

10.1103/PhysRevLett.102.207401

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report picosecond control of excitonic dressed states in a single semiconductor quantum dot. A strong laser pulse couples the exciton and biexciton states, to form an Autler-Townes doublet of the neutral exciton transition. The Rabi-splitting, and hence the admixture of the dressed states follows the envelope of the picosecond control laser. We create a superposition of dressed states, and observe the resulting beat: a direct measurement of a Rabi oscillation in time delay rather than the usual power domain.

引用

页数：4

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