A low-noise CMOS pixel direct charge sensor, Topmetal-II-

被引：37

作者：

An, Mangmang ^{[1
]}

Chen, Chufeng ^{[1
]}

Gao, Chaosong ^{[1
]}

Han, Mikyung ^{[2
]}

Ji, Rong ^{[1
]}

Li, Xiaoting ^{[1
]}

Mei, Yuan ^{[2
]}

Sun, Quan ^{[3
]}

Sun, Xiangming ^{[1
]}

Wang, Kai ^{[1
]}

Xiao, Le ^{[1
]}

Yang, Ping ^{[1
]}

Zhou, Wei ^{[1
]}

机构：

[1] Cent China Normal Univ, Wuhan 430079, Hubei, Peoples R China

[2] Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Div Nucl Sci, 1 Cyclotron Rd, Berkeley, CA 94720 USA

[3] Chinese Acad Sci, Inst Acoust, Beijing 100190, Peoples R China

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2016年 / 810卷

基金：

中国国家自然科学基金;

关键词：

Topmetal; Pixel; Charge sensor; Ion readout; READOUT CHIP; TIME; GEM;

D O I：

10.1016/j.nima.2015.11.153

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

We report the design and characterization of a CMOS pixel direct charge sensor, Topmetal-II-, fabricated in a standard 0.35 mu m CMOS Integrated Circuit process. The sensor utilizes exposed metal patches on top of each pixel to directly collect charge. Each pixel contains a low-noise charge-sensitive preamplifier to establish the analog signal and a discriminator with tunable threshold to generate hits. The analog signal from each pixel is accessible through time-shared multiplexing over the entire array. Hits are read out digitally through a column-based priority logic structure. Tests show that the sensor achieved a < 15 e(-) analog noise and a 200 e(-) minimum threshold for digital readout per pixel. The sensor is capable of detecting both electrons and ions drifting in gas. These characteristics enable its use as the charge readout device in future Time Projection Chambers without gaseous gain mechanism, which has unique advantages in low background and low rate-density experiments. Published by Elsevier B.V.

引用

页码：144 / 150

页数：7

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