共 15 条
[2]
In-situ observation of SiC bulk single crystal growth by x-ray topography
[J].
SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2,
2000, 338-3
:457-460
[4]
Flux-controlled sublimation growth by an inner guide-tube
[J].
SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS,
2002, 389-3
:83-86
[5]
Numerical simulation of heat and mass transfer in SiC sublimation growth
[J].
SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS,
2002, 389-3
:43-46
[6]
Shape of SiC bulk single crystal grown by sublimation
[J].
SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2,
2000, 338-3
:99-102
[7]
NISHIZAWA S, 2001, MAT RES SOC S P, V640
[8]
Nishizawa SIC, 2002, MATER SCI FORUM, V433-4, P13, DOI 10.4028/www.scientific.net/MSF.433-436.13
[9]
Growth 3nd evaluation of high quality SiC crystal by sublimation method
[J].
SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS,
2002, 389-3
:87-90
[10]
SiC single crystal growth rate measurement by in-situ observation using the transmission X-ray technique
[J].
SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2,
2000, 338-3
:75-78