High-quality SiC bulk single crystal growth based on simulation and experiment

被引:21
作者
Nishizawa, SI
Kato, T
Kitou, Y
Oyanagi, N
Hirose, F
Yamaguchi, H
Bahng, W
Arai, K
机构
[1] AIST, PERC, R&D Assoc Future Electron Devices, Adv Power Device Lab, Tsukuba, Ibaraki 3058568, Japan
[2] Natl Inst Adv Ind Sci & Technol, NeRI, Tsukuba, Ibaraki 3058568, Japan
来源
SILICON CARBIDE AND RELATED MATERIALS 2003, PTS 1 AND 2 | 2004年 / 457-460卷
关键词
single crystal; sublimation; numerical simulation; in-situ observation; crystal growth;
D O I
10.4028/www.scientific.net/MSF.457-460.29
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The numerical simulation and in-situ X-ray topography were applied to observe the phenomena inside a crucible. Numerical simulation pointed out that macroscopic grown crystal quality such as grown crystal shape strongly depends on the temperature distribution inside a crucible. In-situ X-ray topography revealed that when the defects were generated, and how the defects were propagated. Most of defects were generated at the initial growth stage. It is important to control the initial stage in order to obtain a high quality SiC single crystal. Numerical simulation also suggested that it is important reduce the residual stress in a grown crystal in order to avoid the dislocation occurrence. From these results based on numerical simulation and experiment, SiC sublimation growth was controlled actively, and the large and high quality SiC single crystal have been grown.
引用
收藏
页码:29 / 34
页数:6
相关论文
共 15 条
[1]   Dislocation constraint by etch back process of seed crystal in the SiC sublimation growth [J].
Kato, T ;
Nishizawa, SI ;
Arai, K .
JOURNAL OF CRYSTAL GROWTH, 2001, 233 (1-2) :219-225
[2]   In-situ observation of SiC bulk single crystal growth by x-ray topography [J].
Kato, T ;
Oyanagi, N ;
Yamaguchi, H ;
Takano, Y ;
Nishizawa, S ;
Arai, K .
SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, 338-3 :457-460
[3]   In-situ observation of silicon carbide sublimation growth by X-ray topography [J].
Kato, T ;
Oyanagi, N ;
Yamaguchi, H ;
Nishizawa, S ;
Khan, MN ;
Kitou, Y ;
Arai, K .
JOURNAL OF CRYSTAL GROWTH, 2001, 222 (03) :579-585
[4]   Flux-controlled sublimation growth by an inner guide-tube [J].
Kitou, Y ;
Bahng, W ;
Kato, T ;
Nishizawa, S ;
Arai, K .
SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3 :83-86
[5]   Numerical simulation of heat and mass transfer in SiC sublimation growth [J].
Nishizawa, S ;
Kato, T ;
Kitou, Y ;
Oyanagi, N ;
Arai, K .
SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3 :43-46
[6]   Shape of SiC bulk single crystal grown by sublimation [J].
Nishizawa, S ;
Kitou, Y ;
Bahng, W ;
Oyanagi, N ;
Khan, MN ;
Arai, K .
SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, 338-3 :99-102
[7]  
NISHIZAWA S, 2001, MAT RES SOC S P, V640
[8]  
Nishizawa SIC, 2002, MATER SCI FORUM, V433-4, P13, DOI 10.4028/www.scientific.net/MSF.433-436.13
[9]   Growth 3nd evaluation of high quality SiC crystal by sublimation method [J].
Oyanagi, N ;
Yamaguchi, H ;
Kato, T ;
Nishizawa, S ;
Arai, K .
SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3 :87-90
[10]   SiC single crystal growth rate measurement by in-situ observation using the transmission X-ray technique [J].
Oyanagi, N ;
Nishizawa, S ;
Kato, T ;
Yamaguchi, H ;
Arai, K .
SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, 338-3 :75-78