A Compact Highly Efficient High-Power Ka-band SiGe HBT Cascode Frequency Doubler With Four-Way Input Transformer Balun

被引:28
作者
Ju, Inchan [1 ]
Cheon, Clifford D. Y. [1 ]
Cressler, John D. [1 ]
机构
[1] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA
关键词
Back end of line (BEOL); balanced; BVCBO; cascode; common centroid; frequency doubler; HBT; heterojunction bipolar transistor; Ka-band; safe operating area (SOA); safe operation area; SiGe; silicon-germanium; transformer; GHZ; TECHNOLOGY; DESIGN;
D O I
10.1109/TMTT.2018.2811494
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A compact highly efficient high-power SiGe Ka-band balanced frequency doubler is presented. Using a compact single-footprint four-way transformer input balun, wideband matching, and high fundamental rejection were achieved simultaneously. A cascode topology with very low base impedance termination was utilized for stable operation and high-voltage swing at the output. Two cascode differential pairs form a common-centroid configuration, resulting strong enhancement in output power, power-added efficiency (PAE), fundamental rejection, and robustness to process and supply variation. The proposed Ka-band cascode balanced frequency doubler was implemented in a 0.13-mu m SiGe BiCMOS technology. Measured results show 13-dBm output power with 22% peak PAE at 34 GHz for a -1-dBm input power. The 3-dB conversion gain bandwidth is from 25 to 40 GHz, fully covering Ka-band. Peak fundamental suppression is 74.5 dB at 33 GHz, and it is higher than 35 dB over Ka-band. No performance degradation is observed after 24-h RF stress test. To the author's best knowledge, this paper has the highest efficiency, the highest output power/power density, the highest conversion gain without output buffers, and the higher or comparable fundamental rejection among any Si-based frequency doublers. Therefore, this doubler will be a promising solution for efficient and high-power local oscillator generation in 5G wireless phased-array communication system.
引用
收藏
页码:2879 / 2887
页数:9
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