Radiation properties of zinc diphosphide and their influence on the infrared absorption

被引：0

作者：

Groza, AA ^{[1
]}

Korbutiak, DV ^{[1
]}

Korbut, EV ^{[1
]}

Kudin, AP ^{[1
]}

Kutz, VI ^{[1
]}

Opilat, VY ^{[1
]}

Pinkovska, MB ^{[1
]}

Tartachnyk, VP ^{[1
]}

机构：

[1] Nucl Res Inst, Ctr Sci, Kiev, Ukraine

来源：

FOURTH INTERNATIONAL CONFERENCE ON MATERIAL SCIENCE AND MATERIAL PROPERTIES FOR INFRARED OPTOELECTRONICS | 1999年 / 3890卷

关键词：

radiation; defects; annealing; optical activity; spectral curve; absorption; phosphorous chains;

D O I：

10.1117/12.368416

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Studying of simple and complex defects in zinc diphosphide after ionizing irradiation has been carried out. ZnP2 crystals of alpha- and beta- modification have been irradiated by gamma-rays of Co-60, electrons (E = 1 MeV, 14 MeV) and reactor's neutrons. Electrical and optical characteristics of initial, irradiated at different temperatures and annealed samples have been measured. From the analysis of experimental and literary dates it's clear that phosphorous chains in zinc diphosphide possess low radiation resistance and main optically active centers are induced by fast particles to phosphorous quasimolecules.

引用

页码：548 / 554

页数：7

共 8 条

[1]

ARTOMONOV VV, 1979, SOV SOL ST PHYS, V21, P1777

[2]

CRAFORD IH, 1959, J APPL PHYS, V30, P1204

[3]

GORBAN IS, 1979, CHEM TECHNOLOGY PHOS, P94

[4]

KOZLOV AI, 1986, THESIS KISHENEV, P1

[5] IDENTIFICATION OF DEFECT STATE ASSOCIATED WITH A GALLIUM VACANCY IN GAAS AND ALXGA1-XAS [J].

LANG, DV ;

LOGAN, RA ;

KIMERLING, LC .

PHYSICAL REVIEW B, 1977, 15 (10) :4874-4882

[6] ENERGY BAND STRUCTURE OF TETRAGONAL CRYSTALS ZNP2 AND CDP2 [J].

SOBOLEV, VV ;

SYRBU, NN ;

SUSHKEVICH, TN .

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1971, 43 (01) :73-+

[7]

TARTACHNYK VP, 1992, THESIS KYIV, P1

[8]

UGAI N, 1969, PHYS STATUS SOLIDI, V31, P329

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