Parallel 2D Axisymmetric Fluid Modeling of CF4 Discharge in an Inductively Coupled Plasma Source During SiO2 Etching

被引：5

作者：

Chiu, Yuan-Ming ^{[1
]}

Chiang, Chung-Hua ^{[2
]}

Hung, Chieh-Tsan ^{[1
]}

Hu, Meng-Hua ^{[1
]}

Wu, Jong-Shinn ^{[1
]}

Hwang, Feng-Nan ^{[3
]}

机构：

[1] Natl Chiao Tung Univ, Dept Mech Engn, Hsinchu 30010, Taiwan

[2] I Shou Univ, Dept Mech & Automat Engn, Kaohsiung 84001, Taiwan

[3] Natl Cent Univ, Dept Math, Jhongli 32001, Taiwan

来源：

PLASMA PROCESSES AND POLYMERS | 2014年 / 11卷 / 04期

关键词：

CF4; discharge; fluid model; inductively coupled plasma (ICP); parallel computing; surface model; ELECTRON-IMPACT IONIZATION; MASS-SPECTROMETRIC MEASUREMENTS; ABSOLUTE CROSS-SECTIONS; ATOMIC LAYER DEPOSITION; FLUOROCARBON PLASMAS; PROBE MEASUREMENTS; DRIVEN DISCHARGES; GLOBAL-MODEL; COLLISIONS; GAS;

D O I：

10.1002/ppap.201300134

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A parallel 2D axisymmetric plasma fluid modeling for an inductively coupled plasma source with tetrafluoromethane precursor is reported. In total, 32 species with 96 gas-phase and 27 surface reactions with site-balance equations are considered. The predicted results of major species densities are in reasonable agreement with reported experiments. The etching products, e.g. SiFx and O-2, are found to be appreciable (approximate to 10%) compared to the precursor near the substrate. The predicted density trends, such as CFx+ and CFx (x=1-3), are also consistent with reported experiments. Finally, the predicted etching rate on the SiO2 substrate is presented and discussed in detail.

引用

页码：366 / 390

页数：25

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