Bandgap scaling and negative differential resistance behavior of zigzag phosphorene antidot nanoribbons (ZPANRs)

被引：9

作者：

Carmel, Santhia ^{[1
]}

Pon, Adhithan ^{[1
]}

Meenakshisundaram, N. ^{[2
]}

Ramesh, R. ^{[1
]}

Bhattacharyya, Arkaprava ^{[1
]}

机构：

[1] SASTRA Deemed Univ, Device Modeling Lab, Thanjavur 613401, Tamil Nadu, India

[2] Vivekananda Coll, Dept Phys, Madurai 625234, Tamil Nadu, India

来源：

PHYSICAL CHEMISTRY CHEMICAL PHYSICS | 2018年 / 20卷 / 21期

关键词：

FIELD-EFFECT TRANSISTORS; SINGLE-LAYER MOS2; ELECTRONIC-PROPERTIES; 2-DIMENSIONAL MATERIALS; GRAPHENE NANORIBBONS; TRANSPORT-PROPERTIES; INTEGRATED-CIRCUITS; BLACK PHOSPHORUS; DEVICE; LATTICES;

D O I：

10.1039/c8cp01435c

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

This work examines the prospect of phosphorene antidot nanoribbons (PANRs) using the density functional based tight binding (DFTB) method. Horizontally perforated PANRs with both armchair (A) and zigzag (Z) configurations were considered for electrical simulations. Our simulation results found that the APANRs cannot be scaled down with nanoribbon width, whereas ZPANRs can be scaled easily. Bandgap scaling in terms of ribbon width, length and antidot number was thoroughly analyzed for ZPANRs. In the end, a two-terminal device was constructed and transmission analysis was performed using the non-equilibrium Green's function (NEGF) methodology. A negative differential resistance (NDR) region appeared in the current-voltage characteristics of the ZPANRs, which paved a pathway for nano-device application.

引用

页码：14855 / 14863

页数：9

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