AZO/Au/AZO tri-layer thin films for the very low resistivity transparent electrode applications

被引:29
作者
Chu, Chien-Hsun [1 ]
Wu, Hung-Wei [2 ]
Huang, Jow-Lay [1 ,3 ,4 ]
机构
[1] Natl Cheng Kung Univ, Dept Mat Sci & Engn, Tainan 70101, Taiwan
[2] Kun Shan Univ, Dept Comp & Commun, Tainan 71003, Taiwan
[3] Natl Univ Kaohsiung, Dept Chem & Mat Engn, Kaohsiung 81148, Taiwan
[4] Natl Cheng Kung Univ, Res Ctr Energy Technol & Strategy, Tainan 70101, Taiwan
来源
MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS | 2014年 / 186卷
关键词
Tri-layer structure; RF magnetron sputtering; Ion sputtering; AZO/Au/AZO; Thin films; Transparent conductive oxides; ELECTRICAL-PROPERTIES; CONDUCTIVE FILMS; SOLAR-CELLS; MULTILAYER; THICKNESS; AU;
D O I
10.1016/j.mseb.2014.03.016
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Aluminum-doped ZnO (AZO)/gold/AZO tri-layer structures with very low resistivity and high transmittance are prepared by simultaneous RF magnetron sputtering (for AZO) and ion sputtering (for Au). The properties of the tri-layer films are investigated at different Au layer thicknesses (5-20 nm). The effects of Au layer thickness and the role of Au on the transmission properties of the tri-layer films were investigated. The very low resistivity of 1.01 x 10(-5)Omega cm, mobility of 27.665 cm(2)V(-1)s(-1), and carrier concentration of 4.563 x 10(22)cm(-3) were obtained at an Au layer thickness of 20 nm. The peak transmittance of 86.18% at 650-nm wavelength was obtained at an Au layer thickness of 8 nm. These results show the films to be a good candidate for high-quality electrode scheme in various display applications. (C) 2014 Elsevier B.V. All rights reserved.
引用
收藏
页码:117 / 121
页数:5
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