Room Temperature Electrically Injected Polariton Laser

被引：174

作者：

Bhattacharya, Pallab ^{[1
]}

Frost, Thomas ^{[1
]}

Deshpande, Saniya ^{[1
]}

Baten, Md Zunaid ^{[1
]}

Hazari, Arnab ^{[1
]}

Das, Ayan ^{[1
]}

机构：

[1] Univ Michigan, Dept Elect Engn & Comp Sci, Ctr Photon & Multiscale Nanomat, Ann Arbor, MI 48109 USA

来源：

PHYSICAL REVIEW LETTERS | 2014年 / 112卷 / 23期

基金：

美国国家科学基金会;

关键词：

BOSE-EINSTEIN CONDENSATION; BULK GAN MICROCAVITY; LIGHT-EMITTING DIODE; DIELECTRIC MICROCAVITY;

D O I：

10.1103/PhysRevLett.112.236802

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Room temperature electrically pumped inversionless polariton lasing is observed from a bulk GaN-based microcavity diode. The low nonlinear threshold for polariton lasing occurs at 169 A/cm(2) in the light-current characteristics, accompanied by a collapse of the emission linewidth and small blueshift of the emission peak. Measurement of angle-resolved luminescence, polariton condensation and occupation in momentum space, and output spatial coherence and polarization have also been made. A second threshold, due to conventional photon lasing, is observed at an injection of 44 kA/cm(2).

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页数：5

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