Blue/green electroluminescence from a ZnO nanorods/p-GaN heteroj unction light emitting diode under different reverse bias

被引：43

作者：

Fu, Qiu-Ming ^{[1
]}

Cao, Wei ^{[1
]}

Li, Guo-Wei ^{[1
]}

Lin, Zhi-Dong ^{[1
]}

Chen, Zhe ^{[1
]}

Xu, Chuan-Bo ^{[1
]}

Tu, Ya-Fang ^{[2
,3
]}

Ma, Zhi-Bin ^{[1
]}

机构：

[1] Wuhan Inst Technol, Sch Mat Sci & Engn, Prov Key Lab Plasma Chem & Adv Mat, Wuhan 430073, Peoples R China

[2] Jianghan Univ, Dept Phys, Wuhan 430056, Peoples R China

[3] Jianghan Univ, Inst Interdisciplinary Res, Wuhan 430056, Peoples R China

来源：

APPLIED SURFACE SCIENCE | 2014年 / 293卷

基金：

中国国家自然科学基金;

关键词：

ZnO; Light emitting diode; Electroluminescence; Interface defects; NANOWIRE; FABRICATION; GROWTH;

D O I：

10.1016/j.apsusc.2013.12.139

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Vertically aligned ZnO nanorods were directly grown on p-GaN film to form a ZnO nanorods/p-GaN heterojunction. Electroluminescence characteristics of the ZnO nanorods/p-GaN heterojunction light emitting diode (LED) operated at different reverse bias were investigated. Only green emission at around 519 nm could be observed at 3.5V, and blue emission at around 468 nm gradually appeared with the increase of reverse bias. The color of the device could be turned from green (0.31, 0.39) to blue (0.16, 0.16) by varying the reverse bias voltages. The electroluminescence mechanism of the heterojunction LED was discussed in terms of interface defects and band diagram. (C) 2014 Elsevier B.V. All rights reserved.

引用

页码：225 / 228

页数：4

共 25 条

[1] Depth-resolved cathodoluminescence study of zinc oxide nanorods catalytically grown on p-type 4H-SiC [J].

Bano, N. ;

Hussain, I. ;

Nur, O. ;

Willander, M. ;

Wahab, Q. ;

Henry, A. ;

Kwack, H. S. ;

Dang, D. Le Si .

JOURNAL OF LUMINESCENCE, 2010, 130 (06) :963-968

[2] Electroluminescence from a n-ZnO/p-GaN hybrid LED [J].

Behrends, Arne ;

Bakin, Andrey ;

Waag, Andreas ;

Kwack, Ho-Sang ;

Dang, Le Si .

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7 NO 6, 2010, 7 (06) :1709-1711

[3] Fabrication of a White-Light-Emitting Diode by Doping Gallium into ZnO Nanowire on a p-GaN Substrate [J].

Chen, Chih-Han ;

Chang, Shoou-Jinn ;

Chang, Sheng-Po ;

Li, Meng-Ju ;

Chen, I-Cherng ;

Hsueh, Ting-Jen ;

Hsu, An-Di ;

Hsu, Cheng-Liang .

JOURNAL OF PHYSICAL CHEMISTRY C, 2010, 114 (29) :12422-12426

[4] Electroluminescence from n-ZnO nanowires/p-GaN heterostructure light-emitting diodes [J].

Chen, Chih-Han ;

Chang, Shoou-Jinn ;

Chang, Sheng-Po ;

Li, Meng-Ju ;

Chen, I-Cherng ;

Hsueh, Ting-Jen ;

Hsu, Cheng-Liang .

APPLIED PHYSICS LETTERS, 2009, 95 (22)

[5] White-Light Electroluminescence From n-ZnO/p-GaN Heterojunction Light-Emitting Diodes at Reverse Breakdown Bias [J].

Chen, H. C. ;

Chen, M. J. ;

Huang, Y. H. ;

Sun, W. C. ;

Li, W. C. ;

Yang, J. R. ;

Kuan, H. ;

Shiojiri, M. .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2011, 58 (11) :3970-3975

[6] The Influence of the ZnO Seed Layer on the ZnO Nanorod/GaN LEDs [J].

Chen, X. Y. ;

Ng, A. M. C. ;

Fang, F. ;

Djurisic, A. B. ;

Chan, W. K. ;

Tam, H. L. ;

Cheah, K. W. ;

Fong, P. W. K. ;

Lui, H. F. ;

Surya, C. .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2010, 157 (03) :H308-H311

[7] ZnO nanorod/GaN light-emitting diodes: The origin of yellow and violet emission bands under reverse and forward bias [J].

Chen, Xinyi ;

Ng, Alan Man Ching ;

Fang, Fang ;

Ng, Yip Hang ;

Djurisic, Aleksandra B. ;

Tam, Hoi Lam ;

Cheah, Kok Wai ;

Gwo, Shangjr ;

Chan, Wai Kin ;

Fong, Patrick Wai Keung ;

Lui, Hsian Fei ;

Surya, Charles .

JOURNAL OF APPLIED PHYSICS, 2011, 110 (09)

[8] Electroluminescence from Solution Grown n-ZnO Nanorod/p-GaN-Heterostructured Light Emitting Diodes [J].

Dalui, Saikat ;

Lin, Chih-Chien ;

Lee, Hsin-Ying ;

Yen, Shiu-Fang ;

Lee, Yao-Jung ;

Lee, Ching-Ting .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2010, 157 (05) :H516-H518

[9] Green, yellow, and orange defect emission from ZnO nanostructures: Influence of excitation wavelength [J].

Djurisic, AB ;

Leung, YH ;

Tam, KH ;

Ding, L ;

Ge, WK ;

Chen, HY ;

Gwo, S .

APPLIED PHYSICS LETTERS, 2006, 88 (10)

[10] Correlation between ZnO nanorod growth and the dislocations in AlN-based substrates [J].

Fu, Qiu-Ming ;

Wu, Jian-Peng ;

Ma, Zhi-Bin ;

Han, Yi-Bo ;

Tu, Ya-Fang .

APPLIED SURFACE SCIENCE, 2013, 268 :209-212

← 1 2 3 →