High-performance short-wavelength infrared photodetectors based on type-II InAs/InAs1-xSbx/AlAs1-xSbx superlattices

被引：44

作者：

Haddadi, A. ^{[1
]}

Suo, X. V. ^{[1
]}

Adhikary, S. ^{[1
]}

Dianat, P. ^{[1
]}

Chevallier, R. ^{[1
]}

Hoang, A. M. ^{[1
]}

Razeghi, M. ^{[1
]}

机构：

[1] Northwestern Univ, Ctr Quantum Devices, Dept Elect Engn & Comp Sci, Evanston, IL 60208 USA

来源：

APPLIED PHYSICS LETTERS | 2015年 / 107卷 / 14期

关键词：

MU-M;

D O I：

10.1063/1.4932518

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A high-performance short-wavelength infrared n-i-p photodiode based on InAs/InAs1-xSbx/AlAs1-xSbx type-II superlattices on GaSb substrate has been demonstrated. The device is designed to have a 50% cut-off wavelength of similar to 1.8 mu m at 300 K. The photodetector exhibited a room-temperature (300 K) peak responsivity of 0.47 A/W at 1.6 pm, corresponding to a quantum efficiency of 37% at zero bias under front-side illumination, without any anti-reflection coating. With an R x A of 285 Q cm(2) and a dark current density of 9.6 x 10(-5) A/cm(2) under -50 mV applied bias at 300 K, the photodiode exhibited a specific detectivity of 6.45 x 10(10) cm Hz(1/2)/W. At 200 K. the photodiode exhibited a dark current density of 1.3 x 10(-8) A/cm(2) and a quantum efficiency of 36%, resulting in a detectivity of 5.66 x 10(12) cm Hz(1/2)/W. (C) 2015 AIP Publishing LLC.

引用

页数：4

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