Effect of oxygen pressure of SiOx buffer layer on the electrical properties of GZO film deposited on PET substrate

被引：22

作者：

Ahn, Byung Du ^{[1
]}

Ko, Young Gun ^{[2
]}

Oh, Sang Hoon ^{[1
]}

Song, Jean-Ho ^{[3
]}

Kim, Hyun Jae ^{[1
]}

机构：

[1] Yonsei Univ, Sch Elect & Elect Engn, Seoul 120749, South Korea

[2] Yeungnam Univ, Sch Mat Sci & Engn, Gyongsan 712749, South Korea

[3] Samsung Elect, LCD Business, LCD Technol, Gyeonggi Do 446711, South Korea

来源：

THIN SOLID FILMS | 2009年 / 517卷 / 23期

关键词：

Ga-doped ZnO; Polyethylene telephthalate; SiOx buffer; Electrical resistivity; PULSED-LASER DEPOSITION; OXIDE THIN-FILMS; OPTICAL-PROPERTIES; ZNO FILMS; TRANSPARENT; PLASMA; GROWTH;

D O I：

10.1016/j.tsf.2009.02.057

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The present work was made to investigate the effect of oxygen pressure of SiOx layer on the electrical properties of Ga-doped ZnO (GZO) films deposited on poly-ethylene telephthalate (PET) substrate by utilizing the pulsed-laser deposition at ambient temperature. For this purpose, the SiOx buffer layers were deposited at various oxygen pressures ranging from 13.3 to 46.7 Pa. With increasing oxygen pressure during the deposition of SiOx layer as a buffer, the electrical resistivity of GZO/SiOx/PET films gradually decreased from 7.6 x 10(-3) to 6.8 x 10(-4) Omega.cm, due to the enhanced mobility of GZO films. It was mainly due to the grain size of GZO films related to the roughened surface of the SiOx buffer layers. In addition, the average optical transmittance of GZO/SiOx/PET films in a visible regime was estimated to be similar to 90% comparable to that of GZO deposited onto a glass substrate. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：6414 / 6417

页数：4

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