Selecting specific 2D building blocks and specific layering sequences of van der Waals heterostructures should allow the formation of new materials with designed properties for specific applications. Unfortunately, the synthetic ability to prepare such structures at will, especially in a manner that can be manufactured, does not exist. Herein, we report the targeted synthesis of new metal-semiconductor heterostructures using the modulated elemental-reactant technique to nucleate specific 2D building blocks, control their thickness, and avoid epitaxial structures with long-range order. The building blocks, VSe2 and GeSe2, have different crystal structures, which inhibits cation intermixing. The precise control of this approach enabled us to synthesize heterostructures containing GeSe2 monolayers alternating with VSe2 structural units with specific sequences. The transport properties systematically change with nanoarchitecture and a charge-density wave-like transition is observed.
机构:
Hong Kong Polytech Univ, Dept Appl Math, Hong Kong, Hong Kong Speci, Peoples R ChinaHong Kong Polytech Univ, Dept Appl Math, Hong Kong, Hong Kong Speci, Peoples R China
Cao, Xinlin
Ghandriche, Ahcene
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Nanjing Ctr Appl Math, Nanjing 211135, Peoples R ChinaHong Kong Polytech Univ, Dept Appl Math, Hong Kong, Hong Kong Speci, Peoples R China
Ghandriche, Ahcene
Sini, Mourad
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Austrian Acad Sci, RICAM, Altenbergerstr 69, A-4040 Linz, AustriaHong Kong Polytech Univ, Dept Appl Math, Hong Kong, Hong Kong Speci, Peoples R China
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Huazhong Univ Sci & Technol, Sch Mat Sci & Engn, State Key Lab Mat Proc & Die & Mould Technol, Wuhan 430074, Peoples R ChinaHuazhong Univ Sci & Technol, Sch Mat Sci & Engn, State Key Lab Mat Proc & Die & Mould Technol, Wuhan 430074, Peoples R China
Liu, Lixin
Zhai, Tianyou
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Huazhong Univ Sci & Technol, Sch Mat Sci & Engn, State Key Lab Mat Proc & Die & Mould Technol, Wuhan 430074, Peoples R ChinaHuazhong Univ Sci & Technol, Sch Mat Sci & Engn, State Key Lab Mat Proc & Die & Mould Technol, Wuhan 430074, Peoples R China
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Dongguk Univ Seoul, Dept Energy & Mat Engn, Seoul 04320, South KoreaDongguk Univ Seoul, Dept Energy & Mat Engn, Seoul 04320, South Korea
Kim, Ki Kang
Lee, Hyun Seok
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Chungbuk Natl Univ, Dept Phys, Cheongju 28644, South KoreaDongguk Univ Seoul, Dept Energy & Mat Engn, Seoul 04320, South Korea
Lee, Hyun Seok
Lee, Young Hee
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Inst Basic Sci, Ctr Integrated Nanostruct Phys CINAP, Suwon 16419, South Korea
Sungkyunkwan Univ, Dept Energy Sci, Suwon 16419, South KoreaDongguk Univ Seoul, Dept Energy & Mat Engn, Seoul 04320, South Korea
机构:
Univ Sao Paulo, Sao Carlos Inst Phys, POB 369, BR-13560970 Sao Carlos, SP, Brazil
Rensselaer Polytech Inst, Dept Phys Appl Phys & Astron, Troy, NY 12180 USAUniv Sao Paulo, Sao Carlos Inst Phys, POB 369, BR-13560970 Sao Carlos, SP, Brazil
Besse, Rafael
Silveira, Julian F. R., V
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Univ Sao Paulo, Sao Carlos Inst Chem, POB 780, BR-13560970 Sao Carlos, SP, BrazilUniv Sao Paulo, Sao Carlos Inst Phys, POB 369, BR-13560970 Sao Carlos, SP, Brazil
Silveira, Julian F. R., V
Jiang, Zeyu
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Rensselaer Polytech Inst, Dept Phys Appl Phys & Astron, Troy, NY 12180 USAUniv Sao Paulo, Sao Carlos Inst Phys, POB 369, BR-13560970 Sao Carlos, SP, Brazil
Jiang, Zeyu
West, Damien
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Rensselaer Polytech Inst, Dept Phys Appl Phys & Astron, Troy, NY 12180 USAUniv Sao Paulo, Sao Carlos Inst Phys, POB 369, BR-13560970 Sao Carlos, SP, Brazil
West, Damien
Zhang, Shengbai
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Rensselaer Polytech Inst, Dept Phys Appl Phys & Astron, Troy, NY 12180 USAUniv Sao Paulo, Sao Carlos Inst Phys, POB 369, BR-13560970 Sao Carlos, SP, Brazil
Zhang, Shengbai
Da Silva, Juarez L. F.
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Univ Sao Paulo, Sao Carlos Inst Chem, POB 780, BR-13560970 Sao Carlos, SP, BrazilUniv Sao Paulo, Sao Carlos Inst Phys, POB 369, BR-13560970 Sao Carlos, SP, Brazil