Wideband and high efficiency AlInAs/GaInAs waveguide photodetectors for 40-Gbps receivers

被引:0
作者
Torikai, T [1 ]
Nakata, T [1 ]
Takeuchi, T [1 ]
Makita, K [1 ]
机构
[1] NEC Corp Ltd, Photon & Wireless Devices Res Labs, Tsukuba, Ibaraki 3058501, Japan
来源
OPTICAL TRANSMISSION SYSTEMS AND EQUIPMENT FOR WDM NETWORKING | 2002年 / 4872卷
关键词
40-Gbps receiver; evanescently coupled photodiode; waveguide photodiode; avalanche photodiode; gain-bandwidth product;
D O I
暂无
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Two types of waveguide photodiodes (WG-PD) - an evanescently coupled photodiode (EC-WG-PD) and a separated-absorption-and-multiplication avalanche photodiode (SAM-WG-APD) - have been developed for use in 40-Gbps receivers. The EC-PD is much more robust than a conventional WG-PD under high optical input operation because of its distributed absorbed optical power density along the light propagation in the waveguide. The EC-WG-PD simultaneously exhibited a high external responsivity of 0.96 A/W, a wide bandwidth of >40 GHz, and as high as 10-mA photocurrent operation. On the other hand, the SAM-WG-APD has a wide bandwidth of 30-35 GHz and a gain-bandwidth product of 140-180 GHz as a result of its small waveguide mesa structure and a thin multiplication layer. Record highest receiver sensitivities of -28.8 dBm at 10 Gbps and -19.6 dBm at 40 Gbps have been achieved for the first time.
引用
收藏
页码:458 / 469
页数:12
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