Lateral metal-semiconductor-metal photodetectors based on amorphous selenium

被引：31

作者：

Wang, Kai ^{[1
,2
]}

Chen, Feng ^{[1
]}

Belev, George ^{[3
]}

Kasap, Safa ^{[3
]}

Karim, Karim S. ^{[1
]}

机构：

[1] Univ Waterloo, Dept Elect & Comp Engn, Waterloo, ON N2L 3G1, Canada

[2] Thunder Bay Reg Res Inst, Thunder Bay, ON P7A 7T1, Canada

[3] Univ Saskatchewan, Dept Elect Engn, Saskatoon, SK S7N 5A9, Canada

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 01期

基金：

加拿大自然科学与工程研究理事会;

关键词：

RAY; PHOTOCONDUCTOR; MAMMOGRAPHY;

D O I：

10.1063/1.3173818

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report a lateral metal-semiconductor-metal (MSM) photodetector (PD) based on an amorphous selenium (a-Se). The PD exhibits a dark current below 200 fA under electric fields ranging from 6 to 12 V/mu m, a responsivity of up to 0.45 A/W, a photogain of 1.2 near short wavelengths of 468 nm, and a high-speed photoresponse with a rise time of 50 mu s, fall time of 60 mu s, and time constant of 30 mu s, respectively. The lateral MSM PD based on a-Se has great potential for use in digital x-ray imaging applications. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3173818]

引用

页数：3

共 11 条

[1] Amorphous selenium as an X-ray photoconductor [J].

Belev, G ;

Kasap, SO .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 2004, 345 :484-488

[2]

BUBE RH, 1992, PHOTOELECTRONIC PROP, P32

[3]

BUBE RH, 1992, PHOTOELECTRONIC PROP, P65

[4] Direct-conversion flat-panel X-ray image sensors for digital radiography [J].

Kasap, SO ;

Rowlands, JA .

PROCEEDINGS OF THE IEEE, 2002, 90 (04) :591-604

[5] UV-enhanced a-Si:H metal-semiconductor-metal photodetector [J].

Khodami, Ida ;

Taghibakhsh, Farhad ;

Karim, Karim S. .

IEEE ELECTRON DEVICE LETTERS, 2008, 29 (09) :1007-1010

[6] High-performance metal-semiconductor-metal deep-ultraviolet photodetectors based on homoepitaxial diamond thin film [J].

Liao, Meiyong ;

Koide, Yasuo .

APPLIED PHYSICS LETTERS, 2006, 89 (11)

[7] Dark current in multilayer amorphous selenium x-ray imaging detectors [J].

Mahmood, S. A. ;

Kabir, M. Z. ;

Tousignant, O. ;

Mani, H. ;

Greenspan, J. ;

Botka, P. .

APPLIED PHYSICS LETTERS, 2008, 92 (22)

[8] Photoconductor gain mechanisms in GaN ultraviolet detectors [J].

Munoz, E ;

Monroy, E ;

Garrido, JA ;

Izpura, I ;

Sanchez, FJ ;

SanchezGarcia, MA ;

Calleja, E ;

Beaumont, B ;

Gibart, P .

APPLIED PHYSICS LETTERS, 1997, 71 (07) :870-872

[9] X-RAY-IMAGING USING AMORPHOUS SELENIUM - A PHOTOINDUCED DISCHARGE READOUT METHOD FOR DIGITAL MAMMOGRAPHY [J].

ROWLANDS, JA ;

HUNTER, DM ;

ARAJ, N .

MEDICAL PHYSICS, 1991, 18 (03) :421-431

[10] The x-ray sensitivity of amorphous selenium for mammography [J].

Stone, MF ;

Zhao, W ;

Jacak, BV ;

O'Connor, P ;

Yu, B ;

Rehak, P .

MEDICAL PHYSICS, 2002, 29 (03) :319-324

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