Passive mode-locking in diode-pumped c-cut Nd:LuVO4 laser with a semiconductor saturable-absorber mirror

被引：12

作者：

Chen, H. R. ^{[1
,2
]}

Lin, J. H. ^{[3
,4
]}

Song, K. T. ^{[3
,4
]}

Lin, K. H. ^{[5
]}

Hsieh, W. F. ^{[1
,2
,6
]}

机构：

[1] Natl Chiao Tung Univ, Dept Photon, Hsinchu 300, Taiwan

[2] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu 300, Taiwan

[3] Natl Taipei Univ Technol, Dept Electroopt Engn, Taipei 10608, Taiwan

[4] Natl Taipei Univ Technol, Inst Electroopt Engn, Taipei 10608, Taiwan

[5] Taipei Municipal Univ Educ, Dept Sci, Taipei 100, Taiwan

[6] Natl Cheng Kung Univ, Inst Electroopt Sci & Engn, Tainan 70101, Taiwan

来源：

APPLIED PHYSICS B-LASERS AND OPTICS | 2009年 / 96卷 / 01期

关键词：

LOCKED ND-LUVO4 LASER; HIGH-POWER; ND-GDVO4; LASER; SPECTROSCOPIC CHARACTERIZATION; CONTINUOUS-WAVE; GROWTH; PERFORMANCE; OUTPUT;

D O I：

10.1007/s00340-009-3491-2

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We demonstrated a diode-pumped passively mode-locked c-cut Nd:LuVO4 picosecond laser with a semiconductor saturable-absorber mirror (SESAM) at a wavelength of 1067.8 nm. Due to the wide bandwidth of 0.48 nm, stable mode-locking has been generated with a duration as short as 3.7 ps, which is shorter than for the a-cut Nd:LuVO4 laser. A maximum output power of 1.67 W was achieved to give a highest peak power of 3.47 KW at 18 W absorbed pump power.

引用

页码：19 / 23

页数：5

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